Effect of Antimony Alloying on Photoelectronic Properties of a-Se

Mikla, Victor I.; Mikla, Victor V.

doi:10.1016/b978-0-12-388429-9.00006-6

Amorphous Chalcogenides 2012

DOI: 10.1016/b978-0-12-388429-9.00006-6

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Effect of Antimony Alloying on Photoelectronic Properties of a-Se

Victor I. Mikla¹,

Victor V. Mikla²

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Improved thermal stability of antimony‐doped amorphous selenium film for X‐ray flat‐panel detectors

Chen

Dong

et al. 2012

Physica Status Solidi (a)

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Amorphous selenium (a-Se) film is a promising photoconductive material for X-ray flat-panel detectors (FPD) application. However, a-Se tends to be crystalline Se at near room temperature. This remarkable temperature sensitivity limits its practical application. To prevent the near-room-temperature crystallization of a-Se film, we fabricate antimony (Sb)-doped a-Se films using a vacuum evaporation technique equipped with an in situ cooling trap. We experimentally demonstrate that the Sb doping improves the thermal stability of a-Se film while possessing a similar X-ray photoelectric conversion efficiency as the pure a-Se film. After air annealing at 50 8C for 90 min, the X-ray diffraction (XRD) results of the 4.1 at.% Sb-doped a-Se film shows no detectable crystallization diffraction peak. Upon applying an electric field of 10 V mm À1 , such Sb-doped a-Se film exhibits dark current density below 1 nA cm À2, while under an X-ray dosage of about 4 mGy, the annealed Sb-doped a-Se film shows a photocurrent density of more than 100 nA cm À2 .

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Improved thermal stability of antimony‐doped amorphous selenium film for X‐ray flat‐panel detectors

Chen

Dong

et al. 2012

Physica Status Solidi (a)

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Effect of Antimony Alloying on Photoelectronic Properties of a-Se

Cited by 1 publication

References 52 publications

Improved thermal stability of antimony‐doped amorphous selenium film for X‐ray flat‐panel detectors

Improved thermal stability of antimony‐doped amorphous selenium film for X‐ray flat‐panel detectors

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