Effect of Argon Gas Flow Rate on the Optical and Mechanical Properties of Sputtered Tungsten Thin Film Coatings

Vijaya, G.; Singh, M. Muralidhar; Krupashankara, M.S.; Kulkarni, R.S.

doi:10.1088/1757-899x/149/1/012075

Cited by 14 publications

(8 citation statements)

References 1 publication

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“…© IOP Publishing Ltd. All rights reserved. from the aforementioned parameters, some other parameters, such as deposition angle [138], deposition pressure [62,139,140], deposition rate [45,61,141,142], deposition time [143], gas flow rate [90,144], annealing time [145], pulse frequency in pulsed magnetron sputtering [146] and deposition voltage [147][148][149][150] also have an influence on the surface roughness of grown thin films. It should be noted that the surface roughness of the final thin films is very system and process dependent, which may also cause a difference in the final results.…”

Section: Effects Of Different Annealing Temperatures On the Surface R...mentioning

confidence: 99%

Effect of deposition parameters on surface roughness and consequent electromagnetic performance of capacitive RF MEMS switches: a review

Chen

Tian

Zhang

et al. 2017

J. Micromech. Microeng.

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Surface roughness seriously affects the electromagnetic performance of capacitive radio frequency (RF) micro-electromechanical system (MEMS) switches. This review presents the effects of different film thickness values, substrate topologies, sputtering powers, gas pressures, gas ratios, substrate temperatures and annealing temperatures on the surface roughness of deposited thin films. At the same time, the mechanisms of the deposition parameters on the surface roughness are also analyzed. The effects of surface roughness on the electromagnetic performance of capacitive RF MEMS switches are then discussed in detail. Finally, two different methods for improving the surface roughness of deposited thin films are given.

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Section: Effects Of Different Annealing Temperatures On the Surface R...mentioning

confidence: 99%

Effect of deposition parameters on surface roughness and consequent electromagnetic performance of capacitive RF MEMS switches: a review

Chen

Tian

Zhang

et al. 2017

J. Micromech. Microeng.

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“…Again, with higher gas flow rate and moderately high power leads to a high bombardment of the atom, which may cause sputter damage to the film. Hence, optimization of gas flow rate is necessary to achieve desired material properties [ 21 , 22 ]. Many experimental works have been undertaken to study the effect of process parameters of RF magnetron sputtering on thin film properties.…”

Section: Introductionmentioning

confidence: 99%

“…However, there have not been many attempts to examine the impact of Ar gas flow rate on the WS 2 thin film properties. This study is a follow-up work of previously reported studies on WS 2 thin film [ 22 , 23 ] and devoted to investigating the impact of variation in gas flow rate on the WS 2 film properties in order to achieve higher crystallite, defect-free, uniform film for the application in the solar cell. As a whole, the objective of this study is to evaluate the micro-structural changes of WS 2 thin film that occurred due to the variation in gas flow rate.…”

Section: Introductionmentioning

confidence: 99%

Impact of Ar Flow Rates on Micro-Structural Properties of WS2 Thin Film by RF Magnetron Sputtering

et al. 2021

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Tungsten disulfide (WS2) thin films were deposited on soda-lime glass (SLG) substrates using radio frequency (RF) magnetron sputtering at different Ar flow rates (3 to 7 sccm). The effect of Ar flow rates on the structural, morphology, and electrical properties of the WS2 thin films was investigated thoroughly. Structural analysis exhibited that all the as-grown films showed the highest peak at (101) plane corresponds to rhombohedral phase. The crystalline size of the film ranged from 11.2 to 35.6 nm, while dislocation density ranged from 7.8 × 1014 to 26.29 × 1015 lines/m2. All these findings indicate that as-grown WS2 films are induced with various degrees of defects, which were visible in the FESEM images. FESEM images also identified the distorted crystallographic structure for all the films except the film deposited at 5 sccm of Ar gas flow rate. EDX analysis found that all the films were having a sulfur deficit and suggested that WS2 thin film bears edge defects in its structure. Further, electrical analysis confirms that tailoring of structural defects in WS2 thin film can be possible by the varying Ar gas flow rates. All these findings articulate that Ar gas flow rate is one of the important process parameters in RF magnetron sputtering that could affect the morphology, electrical properties, and structural properties of WS2 thin film. Finally, the simulation study validates the experimental results and encourages the use of WS2 as a buffer layer of CdTe-based solar cells.

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“…However, one of the gases suitable for use in plasma sputtering is argon gas [9]. Argon is an inert noble gas, which means the dominant influence in plasma sputtering is physics [10]. Argon atoms are heavy atoms with low reactive properties; it is more effective if used to bombard target materials for thin layer deposition [11].…”

Section: Introductionmentioning

confidence: 99%

Effect of target-substrate distance on thickness and hardness of carbon thin films on SKD11 steel using target material from battery carbon rods

Purkuncoro

Soenoko

Santjojo

et al. 2021

EEJET

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Carbon thin films on SKD11 steel were deposited by 40 kHz frequency plasma sputtering technique using a waste of battery carbon rods in argon plasma, and their mechanical properties were investigated by various target-substrate distances (1 cm, 1.7 cm, 2 cm, and 2.4 cm). The power used is 340 watts, the vacuum time is 90 minutes, and the gas flow rate is 80 ml/minute. The deposition time of carbon in plasma sputtering is 120 minutes with the initial temperature (temperature during vacuum) of 28 oC and the final temperature (the temperature after plasma sputtering) is 300 oC. The hardness value of SKD11 steel deposited with carbon thin films on SKD11 with target-substrate distance was tested using the Vickers microhardness test. Testing the thickness of the carbon thin films on the SKD11 steel substrate was carried out using a Nikon type 59520 optical microscope. Qualitative analysis of the thickness of the carbon thin films on the SKD11 steel substrate at a scale of 20 μm is shown by an optical microscope. Qualitatively, the thin film at a distance of 1.7 cm looks the brightest and thickest than other distance variations. Based on the Vickers microhardness test and Nikon type 59520 optical microscope, at the distance of 1 cm to 1.7 cm, the average thickness and hardness increased from 10,724 μm (286.6 HV) to 13,332 μm (335.9 HV). Furthermore, at the variation of the distance from 1.7 cm to 2.4 cm, the average thickness and hardness continued to decrease from 13.332 μm (335.9 HV) to 7.257 μm (257.3 HV). The possibility of interrupting atoms colliding with argon atoms in inert conditions increases at a long distance, thus causing the deposition flux on the SKD11 steel substrate to decrease

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Effect of Argon Gas Flow Rate on the Optical and Mechanical Properties of Sputtered Tungsten Thin Film Coatings

Cited by 14 publications

References 1 publication

Effect of deposition parameters on surface roughness and consequent electromagnetic performance of capacitive RF MEMS switches: a review

Effect of deposition parameters on surface roughness and consequent electromagnetic performance of capacitive RF MEMS switches: a review

Impact of Ar Flow Rates on Micro-Structural Properties of WS2 Thin Film by RF Magnetron Sputtering

Effect of target-substrate distance on thickness and hardness of carbon thin films on SKD11 steel using target material from battery carbon rods

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