Effect of deposition parameters on surface roughness and consequent electromagnetic performance of capacitive RF MEMS switches: a review

Chen, Zhiqiang; Tian, Wenchao; Zhang, Xiaolin; Wang, Yongkun

doi:10.1088/1361-6439/aa8917

Cited by 29 publications

(10 citation statements)

References 181 publications

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“…For the present analysis, the roughness of the thin film is considered as the main observable of interest because it is susceptible to noise and it must be below a threshold for the thin film's electrical conductivity to be acceptable (Chen et al 2017;Ketenoğlu and Ünal 2013;G. Palasantzas and Barnaś 1997;George Palasantzas 1998).…”

Section: Microscale Kinetic Monte Carlo Modelmentioning

confidence: 99%

Multilevel Monte Carlo for noise estimation in stochastic multiscale systems

Kimaev

Ricardez‐Sandoval

2018

Chemical Engineering Research and Design

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 Multilevel Monte Carlo sampling (MLMC) provided conservative noise estimates  MLMC prediction accuracy could be improved with a priori knowledge of the system  MLMC computational cost was an order of magnitude less than Monte Carlo sampling  A lower bound on the achievable MLMC mean square error tolerance was observed  Using the mean kMC timestep in the multiscale model did not affect its predictions

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Section: Microscale Kinetic Monte Carlo Modelmentioning

confidence: 99%

Multilevel Monte Carlo for noise estimation in stochastic multiscale systems

Kimaev

Ricardez‐Sandoval

2018

Chemical Engineering Research and Design

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“…It seems that higher RF power enhanced mobility energy of Al sputtered atoms on the surface of the substrate to diffuse in the substrate during growth stage and formed a new phase of aluminum silicone oxide. In other word, higher sputtering power induced high incident ion energy, resulting in high surface mobility and mean diffusion path of sputtered atoms [26]. In addition, X-ray diffraction pattern, Fig.…”

Section: X-ray Diffraction Analysis (Xrd)mentioning

confidence: 98%

“…Increasing the intensity of diffraction peaks by increasing the RF power confirms a better crystallinity of the samples at higher RF powers. By increasing the sputtering power, the sputtering yield becomes high and the sputtered particles are ejected with higher energy and the growth of a more crystallized phase [26]. It seems that the peak at 2θ = 61.6° is the preferred crystalline orientation in higher RF power and is so strong in 300 W.…”

Section: X-ray Diffraction Analysis (Xrd)mentioning

confidence: 99%

Magnetron sputtering technique for analyzing the influence of RF sputtering power on microstructural surface morphology of aluminum thin films deposited on SiO2/Si substrates

et al. 2021

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In this research, aluminum (Al) thin films were deposited on SiO2/Si substrates using RF magnetron sputtering technique for analyzing the influence of RF sputtering power on microstructural surface morphologies. Different sputtering RF powers (100–400 W) were employed to form Al thin films. The characteristics of deposited Al thin films are investigated using X-ray diffraction pattern (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and Fourier-transforms infrared (FTIR) spectroscopy. The X-ray diffraction (XRD) results demonstrate that the deposited films in low sputtering power have amorphous nature. By increasing the sputtering power, crystallization is observed. AFM analysis results show that the RF power of 300 W is the optimum sputtering power to grow the smoothest Al thin films. FTIR results show that the varying RF power affect the chemical structure of the deposited films. The SEM results show that by increasing the sputtering power leads to the formation of isolated texture on the surface of substrate. In conclusion, RF power has a significant impact on the properties of deposited films, particularly crystallization and shape.

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“…NEM switch actuation can be done using different methods like electrostatic [24] [25], thermal [26], piezoelectric [27] and magnetic [28]. But electrostatic actuation is the most favourable actuation mechanism as it requires low power consumption, small electrode size and low switching time.…”

Section: Introductionmentioning

confidence: 99%

Finite Element Analysis of Graphene Oxide Based Nanoelectromechanical Capacitive Switch

Chaudhary¹,

Mudimela²

2019

Preprint

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The present work deals with finite element analysis (FEA) of a novel configuration of double clamped nanoelectromechanical (NEM) capacitive switch. Graphene oxide (GO), a graphene derivative has been used as suspended beam material in NEM switch for the first time. In the proposed work, GO is used as dielectric material having negative Poisson’s ratio value. The variation in capacitance has observed as the beam is pulled down by the actuating electrode. Analysis of pull-in voltage and von Mises stress are done using COMSOL Multiphysics, for standard and perforated GO NEM switch structures. The actuation voltage of 5.4 V for standard beam structure and 3.35 V for perforated beam structure have been achieved for the beam length of 1µm and width of 0.3 µm. The actuation voltage and von Mises stress value have reduced by making perforations in the beam. The comparative analysis of graphene and GO NEM switches have also been done in terms of von Mises stress to ensure the mechanical reliability. The von Mises stress values for GO NEM switch and graphene NEM switch are 500 MPa and 4.8 GPa respectively. This lesser value of von Mises stress in GO NEM switch makes it a good choice as beam material. The capacitive switch is demonstrated for standard and perforated beam structures. The variation in capacitance has observed as the beam is pulled down by the actuating electrode and at actuation voltage, the maximum value of capacitance obtained is 0.9403 pF.

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Effect of deposition parameters on surface roughness and consequent electromagnetic performance of capacitive RF MEMS switches: a review

Cited by 29 publications

References 181 publications

Multilevel Monte Carlo for noise estimation in stochastic multiscale systems

Multilevel Monte Carlo for noise estimation in stochastic multiscale systems

Magnetron sputtering technique for analyzing the influence of RF sputtering power on microstructural surface morphology of aluminum thin films deposited on SiO2/Si substrates

Finite Element Analysis of Graphene Oxide Based Nanoelectromechanical Capacitive Switch

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