Transition metal trichalcogenides (TMTs) are two-dimensional (2D) systems with quasi-one-dimensional (quasi-1D) chains. These 2D materials are less susceptible to undesirable edge defects, which enhances their promise for low-dimensional optical and electronic device applications. However, so far, the performance of 2D devices based on TMTs has been hampered by contact-related issues. Therefore, in this review, a diligent effort has been made to both elucidate and summarize the interfacial interactions between gold and various TMTs, namely, In4Se3, TiS3, ZrS3, HfS3, and HfSe3. X-ray photoemission spectroscopy data, supported by the results of electrical transport measurements, provide insights into the nature of interactions at the Au/In4Se3, Au/TiS3, Au/ZrS3, Au/HfS3, and Au/HfSe3 interfaces. This may help identify and pave a path toward resolving the contemporary contact-related problems that have plagued the performance of TMT-based nanodevices.
Graphical abstract
I–V characteristics of (a) TiS3, (b) ZrS3, and (c) HfS3