Effect of Au nucleation centers and deposition rate on crystallinity and electronic properties of evaporated Te films.

Okuyama, Katsuro; Yamamoto, Hiromu; Kumagai, Yu

doi:10.1063/1.322247

Cited by 19 publications

(2 citation statements)

References 4 publications

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“…On the other hand, large-scale polycrystalline Te thin films with tens of nanometer thickness prepared by thermal evaporation were studied in 1960-70s [23][24][25] . Material quality (i.e., grain size) and transport properties (i.e., carrier mobility) of the evaporated Te films were shown to be tuned by substrate temperature 24 , nucleation layer 26,27 and deposition rate 26,27 . Specifically, the grain size strongly depends on the deposition temperature with the maximum size obtained at cryogenic temperatures 24 .…”

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confidence: 99%

Evaporated tellurium thin films for p-type field-effect transistors and circuits

et al. 2019

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There is an emerging need for semiconductors that can be processed at near ambient temperature with high mobility and device performance. Although multiple n-type options have been identified, the development of their p-type counterparts remains limited. Here, we report the realization of tellurium ( Te) thin films through thermal evaporation at cryogenic temperatures for fabrication of high-performance wafer-scale p-type field-effect transistors (FETs). We achieve an effective hole mobility of 35 cm 2 V -1 s -1 , on/off current ratio of ~10 4 and subthreshold swing of 108 mVdec -1 on an 8 nm thick film. High-performance Te p-FETs are fabricated on a wide range of substrates including glass and plastic, further demonstrating the broad applicability of this material. Significantly, 3D circuits are demonstrated by integrating multi-layered transistors on a single chip using sequential lithography, deposition and lift-off processes. Finally, various functional logic gates and circuits are demonstrated.

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confidence: 99%

Evaporated tellurium thin films for p-type field-effect transistors and circuits

et al. 2019

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“…The following are proposed to overcome this issue: (1) E g enlargement through Se alloying 48 or dimension down to the quantum limit 22 and (2) device engineering through external doping or dielectric encapsulation 49 . In addition, it is worthwhile to consider optimization of the deposition procedures (e.g., substrate temperature, nucleation layer, and deposition rate) and associated film quality in conjunction with contact/dielectric interface engineering, to further improve electrical properties 50 – 52 .…”

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confidence: 99%

Evaporated nanometer chalcogenide films for scalable high-performance complementary electronics

et al. 2022

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The exploration of stable and high-mobility semiconductors that can be grown over a large area using cost-effective methods continues to attract the interest of the electronics community. However, many mainstream candidates are challenged by scarce and expensive components, manufacturing costs, low stability, and limitations of large-area growth. Herein, we report wafer-scale ultrathin (metal) chalcogenide semiconductors for high-performance complementary electronics using standard room temperature thermal evaporation. The n-type bismuth sulfide delivers an in-situ transition from a conductor to a high-mobility semiconductor after mild post-annealing with self-assembly phase conversion, achieving thin-film transistors with mobilities of over 10 cm2 V−1 s−1, on/off current ratios exceeding 108, and high stability. Complementary inverters are constructed in combination with p-channel tellurium device with hole mobilities of over 50 cm2 V−1 s−1, delivering remarkable voltage transfer characteristics with a high gain of 200. This work has laid the foundation for depositing scalable electronics in a simple and cost-effective manner, which is compatible with monolithic integration with commercial products such as organic light-emitting diodes.

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Electronics and Optoelectronics Based on Tellurium

Zha,

Dong,

Huang

et al. 2024

Advanced Materials

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As a true 1D system, group‐VIA tellurium (Te) is composed of van der Waals bonded molecular chains within a triangular crystal lattice. This unique crystal structure endows Te with many intriguing properties, including electronic, optoelectronic, thermoelectric, piezoelectric, chirality, and topological properties. In addition, the bandgap of Te exhibits thickness dependence, ranging from 0.31 eV in bulk to 1.04 eV in the monolayer limit. These diverse properties make Te suitable for a wide range of applications, addressing both established and emerging challenges. This review begins with an elaboration of the crystal structures and fundamental properties of Te, followed by a detailed discussion of its various synthesis methods, which primarily include solution phase, and chemical and physical vapor deposition technologies. These methods form the foundation for designing Te‐centered devices. Then the device applications enabled by Te nanostructures are introduced, with an emphasis on electronics, optoelectronics, sensors, and large‐scale circuits. Additionally, performance optimization strategies are discussed for Te‐based field‐effect transistors. Finally, insights into future research directions and the challenges that lie ahead in this field are shared.

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Effect of Au nucleation centers and deposition rate on crystallinity and electronic properties of evaporated Te films.

Cited by 19 publications

References 4 publications

Evaporated tellurium thin films for p-type field-effect transistors and circuits

Evaporated tellurium thin films for p-type field-effect transistors and circuits

Evaporated nanometer chalcogenide films for scalable high-performance complementary electronics

Electronics and Optoelectronics Based on Tellurium

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