Evaporated nanometer chalcogenide films for scalable high-performance complementary electronics

Liu, Guoxia; Zhu, Huihui; Zou, Taoyu; Reo, Youjin; Ryu, Gi-Seong; Noh, Yong‐Young

doi:10.1038/s41467-022-34119-6

Cited by 16 publications

(13 citation statements)

References 52 publications

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“…[4][5][6][7][8][9][10] For example, the atomically thick Te exhibits p-type conduction feature with ultrahigh carrier mobility (up to 1430 cm 2 V −1 s −1 ), and thus has been utilized to construct various functional logic gates and circuits. [10][11][12][13][14] The narrow bandgap (≈0.31 eV) of Te together with its strong light-matter interactions make it an ideal candidate for constructing high-performance broadband photodetectors. [15][16][17][18] Moreover, the novel magnetoelectric effect, high-performance thermoelectric, robust piezoelectricity, and large nonlinear optical properties were achieved in the Te crystal.…”

Section: Introductionmentioning

confidence: 99%

Single‐Orientation Epitaxy of Quasi‐1D Tellurium Nanowires on M‐Plane Sapphire for Highly Uniform Polarization Sensitive Short‐Wave Infrared Photodetection

Wei

Wang

Zhang

et al. 2023

Adv Funct Materials

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Tellurium (Te), an elemental van der Waals semiconductor, has intriguing anisotropic physical properties owing to its inherent quais-1D crystal structure. Synthesizing ultrathin Te crystal with uniform orientation is important to its large-scale device applications, but that remains a great challenge. Herein, the nanoscale grooves-induced unidirectional epitaxy growth of 1D Te nanowires via physical vapor deposition on the annealed m-plane sapphire is demonstrated. By enhancing the annealing temperature from 1000 to 1300 °C, nanoscale grooves on m-plane sapphire arising along the [1010] direction and gradually distinct, and the corresponding Te nanowires grown on them turns from random to uniform, finally achieving nearly 95% unidirectional Te nanowires. The as-grown Te nanowires possess high crystallinity with clearly chiral helical chains along the c-axis direction and reveal thickness-tunable bandgap with prominent linear-dichroic. As results, the Te nanowire-based photodetectors demonstrate a broadband photoresponse from visible (532 nm) to short-wave infrared (2530 nm), with high responsivity of 327 A W −1 as well as strong and uniform polarization sensitivity (anisotropic ratio = 2.05) to 1550 nm light. The high crystallinity and superior anisotropy of Te nanowires, combined with the orientation-controlled preparation endows it with great feasibility for constructing chip-scale multifunctional optoelectronic devices.

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Section: Introductionmentioning

confidence: 99%

Single‐Orientation Epitaxy of Quasi‐1D Tellurium Nanowires on M‐Plane Sapphire for Highly Uniform Polarization Sensitive Short‐Wave Infrared Photodetection

Wei

Wang

Zhang

et al. 2023

Adv Funct Materials

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“…Two-dimensional (2D) material-based devices and circuits have gained considerable attention as promising candidates for the next generation of complementary metal-oxide-semiconductor (CMOS) electronics , or as a means to enhance silicon technology and address its limitations, potentially leading to new technological advancements . Mono- and few-layer 2D semiconducting materials, such as transition metal dichalcogenides (TMDs), possess an atomic thickness that is in the nanometer or subnanometer scale.…”

Section: Introductionmentioning

confidence: 99%

Solution-Processed 2D Transition Metal Dichalcogenides: Materials to CMOS Electronics

Zou

Noh

2023

Acc. Mater. Res.

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Metrics & MoreArticle Recommendations CONSPECTUS: Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) have demonstrated exceptional potential as materials for future complementary metal-oxide-semiconductor (CMOS) technology. This is primarily because of their atomic thickness and excellent electrical and mechanical properties.With advancements in fabrication technology, electronic devices based on 2D TMD materials have rapidly progressed from isolated units for scientific experimentation to integrated circuits with practical applications. Among the different production methods, the solutionprocessing of 2D TMD nanomaterial dispersions offers the distinct advantages of low-temperature processing and cost-effective manufacturing for large-scale flexible and wearable electronics. A wide range of 2D nanoflake inks with versatile electronic properties can be assembled into atomic-thick thin films with dangling-bond-free van der Waals interfaces between adjacent nanoflakes. Furthermore, direct printing techniques can easily integrate multifunctional devices, such as n-type and p-type transistors, into CMOS devices and more complex integrated circuits. Despite these benefits and previous accomplishments, the field of solution-processed CMOS electronics using 2D TMD semiconducting materials is in its early stages of development and requires further research. One of the current challenges is the production of scalable and high-purity 2D semiconductor mono-and few layers with large lateral sizes and narrow thickness distribution. The field-effect mobility of solutionprocessed 2D TMD transistors remains lower than that of the transistors manufactured using mechanical exfoliation and chemical vapor deposition methods. In particular, limited research has been conducted on solution-processed p-type 2D TMD transistors. As a result, solution-processed CMOS devices using n-type and p-type 2D TMD transistors are scarce. In this Account, we provide an overview of the recent progress in the field of solution-processed CMOS electronics employing 2D TMD materials. First, we introduce the basic liquid exfoliation methods, such as sonication-assisted exfoliation and molecular intercalation methods, that are commonly utilized to prepare 2D TMD dispersions. In addition, we discuss the production of monolayer 2D materials, which serve as the building blocks for fabricating atomic-thick thin films. Subsequently, we review the typical techniques for depositing 2D inks, including spin coating, drop casting, and inkjet printing. Furthermore, we outline the thin-film patterning process for each technique, which is crucial for integrating multifunctional materials in CMOS devices. Subsequently, we focus on the recent advancements in solution-processed 2D TMD transistors. Furthermore, we explore the various factors that can improve the performance of the devices with regard to charge transport and charge traps. Afterward, we highlight notable applications of solution-processed CMOS technology, such as logic circuits and ri...

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“…The essential requirements for photovoltaic materials include a suitable bandgap (ideally in the range of 1.0–1.5 eV), a high absorption coefficient, a large carrier mobility, and a long minority carrier lifetime. − Furthermore, it is also required that the constituents utilized be highly abundant and weakly toxic . Currently, the established chalcogenide semiconductors mainly include copper indium gallium selenide (CIGS) , and CdTe, , while other options also emerged, such as copper zinc tin sulfoselenide (CZTSSe), , Sb 2 (S, Se) 3 , − Pb(S, Se), , AgBiS 2 , , Bi 2 S 3 , ,, and others. − In recent years, there has been a plethora of potential applications based on these chalcogenides, spanning from the advances of next-generation thin-film photovoltaics, ,, photodetectors, , and phototransistors , to photocatalysis. , The exceptional versatility of these materials renders them exceedingly promising for a diverse range of technological advancements. In particular, bismuth-based chalcogenide semiconductors have attracted considerable attention with reported enhancements in their optoelectronic properties.…”

mentioning

confidence: 99%

Charge-Carrier Dynamics of Evaporated Bismuth-Based Chalcogenide Thin Films Probed with Time-Resolved Microwave Conductivity

Yao

Jia

et al. 2023

J. Phys. Chem. Lett.

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Chalcogenide-based semiconductors are emerging as a set of highly promising candidates for optoelectronic devices, owing to their low toxicity, costeffectiveness, exceptional stability, and tunable optoelectronic properties. Nonetheless, the limited understanding of charge recombination mechanisms and trap states of these materials is impeding their further development. To fill this gap, we conducted a comprehensive study of bismuth-based chalcogenide thin films and systematically investigated the influence of post-treatments via time-resolved microwave conductivity and temperature-dependent photoluminescence. The key finding in this work is that post-treatment with Bi could effectively enhance the crystallinity and charge-carrier mobility. However, the carrier density also increased significantly after the Bi treatment. On the contrary, post-treatment of evaporated Bi 2 S 3 thin films with sulfur could effectively increase the carrier lifetime and mobility by passivating the trap states on the grain boundaries, which is also consistent with the enhanced radiative recombination efficiency.

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Evaporated nanometer chalcogenide films for scalable high-performance complementary electronics

Cited by 16 publications

References 52 publications

Single‐Orientation Epitaxy of Quasi‐1D Tellurium Nanowires on M‐Plane Sapphire for Highly Uniform Polarization Sensitive Short‐Wave Infrared Photodetection

Single‐Orientation Epitaxy of Quasi‐1D Tellurium Nanowires on M‐Plane Sapphire for Highly Uniform Polarization Sensitive Short‐Wave Infrared Photodetection

Solution-Processed 2D Transition Metal Dichalcogenides: Materials to CMOS Electronics

Charge-Carrier Dynamics of Evaporated Bismuth-Based Chalcogenide Thin Films Probed with Time-Resolved Microwave Conductivity

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