Effect of Au/SiO2 substrate on the structural and optical properties of gallium nitride grown by CVD

Abstract

The improvement of the growth of thick GaN films using a fused silica wafer covered with a thin gold layer by chemical vapour deposition at 800 • C is reported. In order to compare the surface properties, crystalline quality, micromilling performance and luminescence, the characterization of a GaN film grown on a silicon wafer is presented as well. The different morphologies of the surface observed on the GaN films are compared on each substrate and the resulting microstructures are presented in detail. High resolution TEM images of the GaN films show the main crystallographic planes characterizing these structures. The wurtzite structure was determined for each sample using the substrates of Au/SiO 2 and Si (100) from the XRD patterns. Also, the re-deposition effect after ion milling of the GaN films is reported. The performance of ionic beam on the surface of the GaN thick films for the geometries patterning of rectangular, circular and annular with two different ion doses was compared. Cathodoluminescence spectra showed that the top surfaces of the samples emit strong UV emissions peaked at 3•35 and 3•32 eV which are related to the Y 4 and Y 6 transitions.

Ultra-small low-threshold mid-infrared plasmonic nanowire lasers based on n-doped GaN

“…6a. The growth of thick GaN films on Au/SiO2 substrates by chemical vapor deposition has been reported in [37]. In this structure, the 100-nm-thick nGaN layer is used to generate strongly confinement SPPs, while the Au substrate is used to suppress the penetration of light field into the metallic material.…”