Effect of B₂O₃ Addition to La(Co_1/2Ti_1/2)O₃ Ceramics on Sintering Behavior and Microwave Dielectric Properties

Abstract

Sintering behaviors and microstructural characteristics of La(Co 1=2 Ti 1=2 )O 3 ceramics were investigated. The La(Co 1=2 Ti 1=2 )O 3 ceramics were prepared by the conventional solid-state route. Doping with B 2 O 3 (up to 0.75 wt %) can effectively promote the densification of La(Co 1=2 Ti 1=2 )O 3 ceramics at a low sintering temperature. With B 2 O 3 addition, the sintering temperature of La(Co 1=2 Ti 1=2 )O 3 can be effectively reduced from 1440 to 1230 -1350 C. At 1350 C/6 h, La(Co 1=2 Ti 1=2 )O 3 ceramic with 0.25 wt % B 2 O 3 addition possesses a dielectric constant (" r ) of 30, a Q Â f value of 64,600 GHz (at 8 GHz) and a temperature coefficient of resonant frequency ( f ) of À48 ppm/ C. The B 2 O 3 -doped La(Co 1=2 Ti 1=2 )O 3 ceramic is applicable in microwave devices requiring low sintering temperature.

Calcining Temperature Dependence of Microwave Dielectric Properties of (1-x)ZnAl2O4–xTiO2 (x=0.21) Ceramics

“…It has been known that microwave dielectric loss includes intrinsic loss mainly caused by the lattice vibration modes and the extrinsic loss predominated by crystallizability, second phases, oxygen vacancies, grain sizes, and densification, etc. [11][12][13] Clearly, density and grain crystallizability play an important role in controlling dielectric loss. In addition, it can be observed from Fig.…”