Effect of Back-Gate Voltage on the High-Frequency Performance of Dual-Gate MoS2 Transistors

Abstract

As an atomically thin semiconductor, 2D molybdenum disulfide (MoS2) has demonstrated great potential in realizing next-generation logic circuits, radio-frequency (RF) devices and flexible electronics. Although various methods have been performed to improve the high-frequency characteristics of MoS2 RF transistors, the impact of the back-gate bias on dual-gate MoS2 RF transistors is still unexplored. In this work, we study the effect of back-gate control on the static and RF performance metrics of MoS2 high-frequency transistors. By using high-quality chemical vapor deposited bilayer MoS2 as channel material, high-performance top-gate transistors with on/off ratio of 107 and on-current up to 179 μA/μm at room temperature were realized. With the back-gate modulation, the source and drain contact resistances decrease to 1.99 kΩ∙μm at Vbg = 3 V, and the corresponding on-current increases to 278 μA/μm. Furthermore, both cut-off frequency and maximum oscillation frequency improves as the back-gate voltage increases to 3 V. In addition, a maximum intrinsic fmax of 29.7 GHz was achieved, which is as high as 2.1 times the fmax without the back-gate bias. This work provides significant insights into the influence of back-gate voltage on MoS2 RF transistors and presents the potential of dual-gate MoS2 RF transistors for future high-frequency applications.

Improving electron mobility in MoS2 field-effect transistors by optimizing the interface contact and enhancing the channel conductance through local structural phase transition

“…5(g) compares the mobility of our device with n-type MoS 2 FETs reported previously. 28,33–56 It is worth noting that the local 1T structural phase transition is an effective approach for coordinately improving both the intrinsic transport and contact properties to achieve high-speed and low-power MoS 2 FETs.…”

Chemical Vapor Deposition of Uniform and Large-Domain Molybdenum Disulfide Crystals on Glass/Al2O3 Substrates

“…Figure 4 d shows the transferred MoS 2 domains with uniform thickness that were grown on glass/Al 2 O 3 substrates. The details of the transfer method have been reported in our previous works [ 24 , 25 , 37 , 38 ].…”

Nanotechnology for Electronic Materials and Devices

“…(iii) Other paper focus on advanced nanoscale characterization, mainly based on scanningprobe methods (scanning non linear dielectric microscopy [12] and high-resolution scanning capacitance spectroscopy [13]), as well as on surface optical techniques (photoluminescence and spectroscopic ellipsometry) [14]. (iv) Finally, some papers are dedicated to device performances [15] and circuit analysis [16], providing evidence that it is crucial to move from research to technological development to control the quality of innovative products and functionalities.…”