Effect of barium chloride doping on PVA microstructure: positron annihilation study

Bhajantri, R. F.; Ravindrachary, V.; Harisha, A.; Ranganathaiah, C.; Kumaraswamy, G. N.

doi:10.1007/s00339-007-3923-y

Cited by 138 publications

(77 citation statements)

References 29 publications

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“…In recent years, metal/metal doped polymer/semiconductor (MPS) structures, which are known as MPS type Schottky barrier diodes (SBDs), have gained great importance due to their potential applications in the microelectric industry, instead of classic metal/ semiconductor (MS) and metal/insulator/semiconductor (MIS) type SBDs [1][2][3][4][5][6][7][8][9][10][11][12]. MS type SBDs, with a thin interfacial polymer layer, such as polyaniline, poly(alkylthiophene), polypyrrole, polythiophene, poly(3-hexylthiophene) and polyvinyl alcohol (PVA), have been investigated by chemists, physicists, and electrical engineers, as well due to potential applications and interesting properties of these polymers.…”

Section: Introductionmentioning

confidence: 99%

A Comparative Study on Electrical Characteristics of Au/N-Si Schottky Diodes, with and Without Bi-Doped PVA Interfacial Layer in Dark and Under Illumination at Room Temperature

Alialy¹,

Tecimer²,

Uslu³

et al. 2017

J Nanomed Nanotechnol

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In order to see the effect of Bi-doped PVA interfacial layer on electrical characteristics, both Au/n-Si (MS) and Au/Bidoped PVA/n-Si (MPS) type Schottky barrier diodes (SBDs) were fabricated, and their main electrical parameters were investigated using current-voltage (I-V) and capacitance-voltage (C-V) measurements, in dark and under illumination at room temperature. Forward bias semi-logarithmic I-V plots of these SBDs show two distinct linear regions, with different slopes in the low and intermediate voltage region. Such behavior in I-V plots was explained by two parallel diodes model. Experimental results show that the ideality factor (n), barrier height (φ b ), series and shunt resistances (R s and R sh ), and the density of interface states/traps (N ss ) are strong functions of illumination level and applied bias voltage. The R s values were determined from the I-V characteristics, by using both Ohm's law. The energy distribution profile of N ss was also obtained from the forward bias I-V characteristics, by taking into account voltage dependent barrier height (φ e ) and ideality factor (n). It was found that Bi-doped PVA layer lead to a considerable decrease in the leakage current, R s and N ss and increase in R sh and rectifier rate (RR=I F /I R ). In conclusion, a thin Bi-doped PVA interfacial layer, considerably improved the diode performance, both in dark and under illumination.account voltage dependent barrier height (φ B (V)) and ideality factor n(V). Experimental results show that the Bi-doped interfacial PVA layer led to considerable decrease in the leakage current, R s and N ss and led to increase in R sh and rectifier rate (RR=I F /I R ). So, it can be said that Bi-doped PVA considerably improved the performance of SBD. Experimental ProcedureFor the fabrication of Au/PVA (Bi-doped)/n-Si (MPS), (phosphor doped) single crystal silicon with surface orientation, 350 μm thickness and 0.7 Ω.cm resistivity was used. Si wafer was degreased in organic solution of peroxide-ammoniac solution in 10 minutes, and then etched in a sequence of H 2 O+HCl solution, and finally quenched in de-ionized water resistivity of 18 MΩ.cm for a prolonged time. Preceding each cleaning step, the wafer was rinsed thoroughly in de-ionized water. Immediately after surface cleaning, high purity (99.999%) gold (Au), with a thickness of ~2000Å, was thermally evaporated onto the whole back side of Si wafer, in a pressure about 10 -6 Torr in high vacuum metal evaporation system. In order to perform a low resistivity ohmic back metal contact, n-Si wafer was sintered at about 450°C for 5 min in N 2 atmosphere.Immediately after the formation of ohmic contact, 0.5 g of bismuth acetate was mixed with 50 g of polyvinyl Alcohol (PVA), molecular Citation: Alialy S, Tecimer H, Uslu H, Altındal Ş (2013) A Comparative Study on Electrical Characteristics of Au/N-Si Schottky Diodes, with and Without Bi-Doped PVA

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Section: Introductionmentioning

confidence: 99%

A Comparative Study on Electrical Characteristics of Au/N-Si Schottky Diodes, with and Without Bi-Doped PVA Interfacial Layer in Dark and Under Illumination at Room Temperature

Alialy¹,

Tecimer²,

Uslu³

et al. 2017

J Nanomed Nanotechnol

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“…The dielectric measurements in the frequency range from 4 Hz to 5 MHz have been performed at room temperature and at different temperatures using HIOKI-IM3570 high precession impedance analyzer interfaced to a computer by sandwiching the film samples between two steel electrodes of 1.3 cm diameter. 16 Before measurement, the samples were again dried to reduce the solvent residual effect and the instrument were calibrated with open circuit and closed circuit using standard methods to reduce errors. The capacitance and dielectric loss factors were measured and repeated four to five times for repeatability in the values.…”

Section: Characterization Methodsmentioning

confidence: 99%

Synthesis and characterization of multifunctional ZnBr₂/PVA polymer dielectrics

et al. 2016

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Different weight percentage of ZnBr 2 doped poly(vinyl alcohol) (PVA) free standing composite films were prepared using solution casting method. These films were characterized for analyzing structural, dielectric, electrochemical properties. This paper mainly focused to understand the contribution of physical phenomenon on conductivity in terms of dielectric parameters. FTIR spectrum confirms the interaction between ZnBr 2 and PVA. Pseudo-capacitive behavior observed from cyclic voltammograms. Dielectric properties of the composites follow non-Debye type behavior. The conducting phenomenon occurs due to hopping of ions between coordination sites present in the composite and the segmental relaxation of polymer chain.

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“…In addition, PVA is a polar polymer where the dipoles entrapped the electrons and caused interfacial polarization with the arrangement of large dipoles on the metal particles [29]. The dielectric behavior of nanocomposites also depends on several factors such as electrode effect, orientation, atomic and electronic polarization [30]. Figure 4 shows the dielectric loss, ε″ of the nanocomposites exhibited decreasing trend with the increase in applied frequency.…”

Section: Materials Characterizationmentioning

confidence: 99%

“…The significant increment in the conductivity and dielectric permittivity of the nanocomposites are ascribed to high physical interactions between polymer chains and the conductive networks of MWNT-AgNP. As the AgNP content increases, there would be a charge transfer complexes (CTC) occurs within amorphous regions of the PVA by reducing the potential barrier of two localized states to allow the transfer of charge carriers [27,30,37]. However, as the content of AgNP increased further up to 1.8 wt%, inducing large pores and metal clouds exist between the MWNT networks and the matrix ( figure 7(d)).…”

Section: Morphology Analysismentioning

confidence: 99%

The tunable permittivity of multi-walled carbon nanotubes/silver nanoparticles reinforced polyvinyl alcohol (PVA) nanocomposites at low frequency

Yusof

Wong

et al. 2018

Mater. Res. Express

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This paper is about tailoring high permittivity of multi-walled carbon nanotubes/silver nanoparticles (MWNT-AgNP) filled polyvinyl alcohol (PVA) nanocomposites at low frequency. PVA/MWNTAgNP nanocomposites were synthesized via solution-casting technique at low MWNT content with different loading of AgNP. The nanocomposites showed a significant increment in ac conductivity, σ ac , and dielectric permittivity, ε′ by two orders of magnitude as compared to pure PVA. The maximum ε′ value was achieved about 600 at 1.0 wt% of AgNP due to the increased charge carriers density and high interfacial polarization within the nanocomposites. The relaxation frequency was shifted towards a higher value with the increased of AgNP content while the relaxation time was decreased by 40%. Field emission scanning electron microscopy (FESEM) images showed the enhanced distribution of MWNT in the presence of AgNP to provide conductive pathways in the matrix. This was confirmed by energy-dispersive x-ray (EDX) analysis and ultraviolet-visible (UV-vis) spectroscopy. As a result, PVA/MWNT-AgNP nanocomposites have great potential for electrical applications such as cable accessories, high charge-storage capacitor and electromagnetic interference shielding materials.

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Effect of barium chloride doping on PVA microstructure: positron annihilation study

Cited by 138 publications

References 29 publications

A Comparative Study on Electrical Characteristics of Au/N-Si Schottky Diodes, with and Without Bi-Doped PVA Interfacial Layer in Dark and Under Illumination at Room Temperature

A Comparative Study on Electrical Characteristics of Au/N-Si Schottky Diodes, with and Without Bi-Doped PVA Interfacial Layer in Dark and Under Illumination at Room Temperature

Synthesis and characterization of multifunctional ZnBr₂/PVA polymer dielectrics

The tunable permittivity of multi-walled carbon nanotubes/silver nanoparticles reinforced polyvinyl alcohol (PVA) nanocomposites at low frequency

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Effect of barium chloride doping on PVA microstructure: positron annihilation study

Cited by 138 publications

References 29 publications

A Comparative Study on Electrical Characteristics of Au/N-Si Schottky Diodes, with and Without Bi-Doped PVA Interfacial Layer in Dark and Under Illumination at Room Temperature

A Comparative Study on Electrical Characteristics of Au/N-Si Schottky Diodes, with and Without Bi-Doped PVA Interfacial Layer in Dark and Under Illumination at Room Temperature

Synthesis and characterization of multifunctional ZnBr2/PVA polymer dielectrics

The tunable permittivity of multi-walled carbon nanotubes/silver nanoparticles reinforced polyvinyl alcohol (PVA) nanocomposites at low frequency

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Product

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Synthesis and characterization of multifunctional ZnBr₂/PVA polymer dielectrics