Effect of barriers length and doping concentration on GaAs/AlGaAs RTD

Singh, Man Mohan; Siddiqui, M. J.; Khan, Ahmad Neyaz; Anjum, S. G.

doi:10.1109/indicon.2015.7443753

Cited by 5 publications

(4 citation statements)

References 11 publications

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“…The maximum current density is observed when the doping concentration is maximum. The graphs and the results obtained are congruent with the results obtained by Singh et al [15].…”

Section: Current Densitysupporting

confidence: 92%

“…It is studied that the electron's wavelength is equivalent to quantum well's proportions (5 -10 nm). In consequence, the electron's wave nature results in phenomena like quantum tunneling, forming the basis of the working of RTD [15].…”

Section: Rtd Design and Simulation Frameworkmentioning

confidence: 99%

“…A significant decrease in peak current density can be observed due to a decrease in tunneling as the width is increased [30]. The reduction in PVR is obtained because increasing the barrier width would allow the electrons more time to stay in the well, and hence would require a specific amount of energy to tunnel through it, which reduces the tunneling probability resulting in a low current density [15].…”

Section: Current Densitymentioning

confidence: 99%

“…Klimeck [14] discusses in-depth various simulations of different parameters of single and double barrier RTD in his tutorials. Singh et al [15] investigated the effect of barrier length and doping concentration on AlGaAs-GaAs RTD. Rong et al [16] theoretically model triple barrier RTD based on AlGaN/GaN heterostructures.…”

Section: Introductionmentioning

confidence: 99%

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Simulation and Comparative Study of Resonant Tunneling Diode

et al. 2022

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This paper studies and investigates the effect of physical and electrical parameters on double, triple and six barrier resonant tunneling diodes (RTD). The materials used for quantum well and barriers are Gallium arsenide (GaAs) and Aluminium gallium arsenide (AlGaAs), respectively. The parameters that were reasoned and studied include conduction band, current density, transmission coefficient and resonance energy. The above parameters were studied by changing bias voltage, temperature, barrier width and doping concentration. From the simulations performed it is observed that for double barrier RTD the peak current density is observed at 0.2 V and the valley current density is observed at 0.3 V, whereas for a triple barrier RTD the peak current density is observed at 0.015 V and the valley current density is observed at 0.06 V. The value of transmission coefficient for double barrier RTD decreases especially after bias applied is more than resonant bias (0.2 V). The effect of increasing bias leads to a decrease in the resonance level in the conduction band. The width of resonance energy decreases with the increase in barrier width. With increase in number of barrier the number of resonance level increases which leads to an increasing peaks in the transmission coefficient curve. The effect of increasing temperature leads to higher current and more resonance energy. With the thickening of barrier width, less transmission of electrons occurs leading to a reduced current density. When the barriers are increased the negative differential region (NDR) is achieved at low voltages. HIGHLIGHTS This paper studies and investigates the effect of physical and electrical parameters on double, triple and six barrier resonant tunneling diodes (RTD) The parameters include conduction band, current density, transmission coefficient, and resonance energy The parameters were studied by changing bias voltage, temperature, barrier width, and doping concentration It is observed that for double barrier RTD the peak current density is observed at 0.2 V and the valley current density is observed at 0.3 V For a triple barrier RTD the peak current density is observed at 0.015 V and the valley current density is observed at 0.06 V GRAPHICAL ABSTRACT

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“…The maximum current density is observed when the doping concentration is maximum. The graphs and the results obtained are congruent with the results obtained by Singh et al [15].…”

Section: Current Densitysupporting

confidence: 92%

Section: Rtd Design and Simulation Frameworkmentioning

confidence: 99%

Section: Current Densitymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Simulation and Comparative Study of Resonant Tunneling Diode

et al. 2022

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Electrical characterization of triple barrier GaAs/AlGaAs RTD with dependence of operating temperature and barrier lengths

Singh

Siddiqui

2017

Materials Science in Semiconductor Processing

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GaAs-based resonant tunneling diode: Device aspects from design, manufacturing, characterization and applications

Samanta

2023

J. Semicond.

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This review article discusses the development of gallium arsenide (GaAs)-based resonant tunneling diodes (RTD) since the 1970s. To the best of my knowledge, this article is the first review of GaAs RTD technology which covers different epitaxial-structure design, fabrication techniques, and characterizations for various application areas. It is expected that the details presented here will help the readers to gain a perspective on the previous accomplishments, as well as have an outlook on the current trends and future developments in GaAs RTD research.

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Effect of barriers length and doping concentration on GaAs/AlGaAs RTD

Cited by 5 publications

References 11 publications

Simulation and Comparative Study of Resonant Tunneling Diode

Simulation and Comparative Study of Resonant Tunneling Diode

Electrical characterization of triple barrier GaAs/AlGaAs RTD with dependence of operating temperature and barrier lengths

GaAs-based resonant tunneling diode: Device aspects from design, manufacturing, characterization and applications

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