“…The traditional strategy of doping has been widely explored to improve the TE properties by tuning the carrier concentration to optimize the power factor (S 2 σ). Dopants, such as Cd [9], Al [10], Ga [10], In [10,11], Hg [12], Nb [13], Te [14,15], Mg [16,17], Ag [18,19], Cu [18], I [20], Se [21], Fe [22], Bi [23], and Pb [24], have been investigated in β-Zn 4 Sb 3 so far. However, most of the above investigations (including Ag doping) were done below room temperature.…”