2010
DOI: 10.1016/j.jallcom.2010.05.034
|View full text |Cite
|
Sign up to set email alerts
|

Effect of Bi doping on the thermoelectric properties of Zn4Sb3

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
5

Citation Types

1
12
0

Year Published

2011
2011
2021
2021

Publication Types

Select...
7
1

Relationship

1
7

Authors

Journals

citations
Cited by 37 publications
(13 citation statements)
references
References 26 publications
1
12
0
Order By: Relevance
“…Thus, efforts have been made to include elements ubstituting/dopingi nto the Zn site including Cd doping, [39] Mg doping, [29] Bi doping, [40] Gd doping, [41] or thermalp rocessing in inert gas (e.g. Thus, efforts have been made to include elements ubstituting/dopingi nto the Zn site including Cd doping, [39] Mg doping, [29] Bi doping, [40] Gd doping, [41] or thermalp rocessing in inert gas (e.g.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…Thus, efforts have been made to include elements ubstituting/dopingi nto the Zn site including Cd doping, [39] Mg doping, [29] Bi doping, [40] Gd doping, [41] or thermalp rocessing in inert gas (e.g. Thus, efforts have been made to include elements ubstituting/dopingi nto the Zn site including Cd doping, [39] Mg doping, [29] Bi doping, [40] Gd doping, [41] or thermalp rocessing in inert gas (e.g.…”
Section: Introductionmentioning
confidence: 99%
“…In particular, improving the thermals tability of Zn 4 Sb 3 materials could have benefits for practical applications. Thus, efforts have been made to include elements ubstituting/dopingi nto the Zn site including Cd doping, [39] Mg doping, [29] Bi doping, [40] Gd doping, [41] or thermalp rocessing in inert gas (e.g. Ar), [34] or melt-spun preparation, [42] or compositingZ n 4 Sb 3 with nanostructures, [17] etc.…”
Section: Introductionmentioning
confidence: 99%
“…The traditional strategy of doping has been widely explored to improve the TE properties by tuning the carrier concentration to optimize the power factor (S 2 σ). Dopants, such as Cd [9], Al [10], Ga [10], In [10,11], Hg [12], Nb [13], Te [14,15], Mg [16,17], Ag [18,19], Cu [18], I [20], Se [21], Fe [22], Bi [23], and Pb [24], have been investigated in β-Zn 4 Sb 3 so far. However, most of the above investigations (including Ag doping) were done below room temperature.…”
Section: Introductionmentioning
confidence: 99%
“…Among them, metal doping has been widely studied to optimize its TE performance. Elements such as Ge, Cd, Hg, In, Si, Ag, Cu, and Nb have been used to substitute Zn , and Sb has been replaced by Ti, Te, or Bi , but the TE performance has not been improved significantly. Moreover, the poor thermal stability and weak mechanical property resulting from cracks in polycrystalline β‐Zn 4 Sb 3 are the main reasons restricting its practical application.…”
Section: Introductionmentioning
confidence: 99%