“…Indeed, it has now been shown that a variety of conventionally deposited ͑i.e., sputtered or evaporated͒ metallizations, including W-Al, 36 Mo-Al, 37,38 Ta-Al, 39 Ir-Al, 40,41 and Pd-Al, 42 may be utilized to enhance the Schottky barrier height of contacts to n-GaAs. Indeed, it has now been shown that a variety of conventionally deposited ͑i.e., sputtered or evaporated͒ metallizations, including W-Al, 36 Mo-Al, 37,38 Ta-Al, 39 Ir-Al, 40,41 and Pd-Al, 42 may be utilized to enhance the Schottky barrier height of contacts to n-GaAs.…”