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We describe the growth and characteristics of AlInGaAs, self-aligned buried heterostructure quantum well lasers deposited by micro-selective-area growth. The lateral waveguide is defined by metalorganic vapor-phase epitaxy in narrow stripe openings; and the natural tendency to form smooth, no-growth {111} sidewall planes produces a low-loss, single-mode waveguide. By proper adjustment of the growth conditions after the waveguide formation, the waveguide may be buried in p-type InP. A buried heterostructure (BH) laser is there formed in a single growth step, eliminating the deterioration associated with air exposure and etch damage, especially for AlInGaAs active regions. The AlInGaAs BH lasers formed in this simple manner exhibit good performance characteristics, with room-temperature threshold current of 4mA.

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