10-Gb/s InGaAs p-i-n Photodiodes With Wide Spectral Range and Enhanced Visible Spectral Response

Huang, Y. C.; Yang, Chih-Chao; Peng, Te-Chin; Cheng, Fuhua; Wu, Meng‐Chyi; Tsai, Yao-Tsong; Ho, Chen-Ta; Liu, Ivy; Hong, Chao‐Chi; Lin, Chia-Chien

doi:10.1109/lpt.2007.891645

Cited by 19 publications

(5 citation statements)

References 5 publications

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“…A cross section of the 3D device is shown in Figure 7 portraying the net doping within the device. Dark current value at 5 V was measured to be 21 nA and is much higher than that achieved by conventional InGaAs VPDs (in pA values) 34 due to the absence of a capping layer such as InP to reduce the surface leakage current. However, the modeled device's dark current is comparable to conventional ILPP that have been fabricated before as portrayed in Figure 8.…”

Section: Numerical Modelingmentioning

confidence: 81%

Concentration‐dependent minority carrier lifetime in an In_0.53Ga_0.47As interdigitated lateral PIN photodiode model based on spin‐on chemical fabrication methodology

Menon

Kandiah

Ehsan

et al. 2010

Int J Numerical Modelling

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SUMMARYThe fitted parameters for the analytic function used to specify the doping dependence of minority carrier lifetimes for In 0.53 Ga 0.47 As (InGaAs) is described in this paper. This model together with other carrier models was used to develop an interdigitated lateral PIN photodiode utilizing InGaAs as the absorbing layer. We propose the usage of spin-on chemicals such as spin-on dopants and spin-on glass to form the p1 wells, n1 wells and the surface passivation layer of the device hence providing a cheap and easy solution versus the conventional epitaxial growth methodology. The modeled device achieved dark currents of 0.21 nA and capacitance of 2.87 nF at an operating voltage of 5 V. Optical illumination at a wavelength of 1550 nm and power of 10 W/cm 2 enabled the device to achieve responsivity of 0.56 A/W and external quantum efficiency of 44%. The À3 dB frequency response of the device was at 8.93 GHz and signal-tonoise ratio is 36 dB. The developed device shows close correlation with experimentally developed devices developed using other fabrication methodologies. The results of this work would be useful in the thorough development of InGaAs-based devices based on spin-on chemical fabrication methodology using commercial device simulation packages.

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Section: Numerical Modelingmentioning

confidence: 81%

Concentration‐dependent minority carrier lifetime in an In_0.53Ga_0.47As interdigitated lateral PIN photodiode model based on spin‐on chemical fabrication methodology

Menon

Kandiah

Ehsan

et al. 2010

Int J Numerical Modelling

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“…9, respectively. [15,20,21]. This is because the PIN PD in this work utilized a different technology and design topology compared to [15,20,21].…”

Section: Photodetector Simulationmentioning

confidence: 99%

“…[15,20,21]. This is because the PIN PD in this work utilized a different technology and design topology compared to [15,20,21]. Besides, the proposed PIN PD covers the wavelength from 1310nm to 1550 nm.…”

Section: Photodetector Simulationmentioning

confidence: 99%

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Design and Simulation of Top Illuminated InGaAs PIN Photodetector for Millimeter-Wave Applications

Ngah¹,

Rasmi²,

Yusof³

et al. 2017

KEM

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This paper proposed a newdesign of top illuminated PIN photodetector at 1550nm wavelength for millimeter-wave applications. Device topology, structure and fabrication methods were considered in designing the photodetector. The combination material of InP/InGaAsP/InGaAs/InGaAsP was used in designing the top illuminated PIN photodetector. This PIN photodetector was targeted to produce at least 0.60A/W of responsivity with a dark current of <100nA. The design, layout, and electrical characteristics of this photodetector were carried out using SILVACO TCAD tool. The simulated results show higher responsivity value than targeted, device frequency response of -3dBm at 40GHz with targeted dark current achievable within the wavelength absorption bands specification. The results are compared with similar designs from other reported works.

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“…L ATTICE-MATCHED InP/InGaAs/InP heterostructure p-i-n photodetectors (PIN-PDs) with a cut-off wavelength of 1650 nm have been popularly used as receivers for optical fiber communications and power meters [1]. The PIN devices have mesa-and planar-type structures.…”

Section: Introductionmentioning

confidence: 99%

Large-Area Planar InGaAs p-i-n Photodiodes With Mg Driven-in by Rapid Thermal Diffusion

Huang

Lee

2014

IEEE Electron Device Lett.

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Conventional InP/InGaAs/InP heterostructure p-i-n photodiodes (PIN-PDs) are usually fabricated by postgrowth Zn diffusion to form the p-type region. In this letter, we propose a novel method to fabricate the high performance of largearea planar InP/InGaAs/InP PIN-PDs with Mg driven-in process. The Mg driven-in is implemented by spin-on dopant technique using magnesium-silica-film (MgSiO x ) source and through the rapid thermal diffusion. The preparation of MgSiO x source carrier as the p-type dopant for InP/InGaAs heterostructure is more time-saving than that of zinc-phosphorous-dopant-coating because the latter needs an additional step of oxygen (O 2 ) plasma to remove a thick resin layer. To improve the responsivity of vertically illuminated PDs, Si/Al 2 O 3 bilayers are deposited as the antireflective coating. The 800-µm-diameter PD with Mg driven-in exhibits a low dark current of 20 pA (or 4 nA/cm 2 ) at −10 mV, a high responsivity of 1.14 A/W at 1550-nm wavelength, an excellent quantum efficiency of 91%, and a good uniformity in the light received area. These characteristics are comparable to those of the PD with Zn driven-in. Index Terms-p-i-n photodiodes (PIN-PDs), rapid thermal diffusion (RTD), spin-on-dopant (SOD), magnesium-silicafilm (MgSiO x ).

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10-Gb/s InGaAs p-i-n Photodiodes With Wide Spectral Range and Enhanced Visible Spectral Response

Cited by 19 publications

References 5 publications

Concentration‐dependent minority carrier lifetime in an In_0.53Ga_0.47As interdigitated lateral PIN photodiode model based on spin‐on chemical fabrication methodology

Concentration‐dependent minority carrier lifetime in an In_0.53Ga_0.47As interdigitated lateral PIN photodiode model based on spin‐on chemical fabrication methodology

Design and Simulation of Top Illuminated InGaAs PIN Photodetector for Millimeter-Wave Applications

Large-Area Planar InGaAs p-i-n Photodiodes With Mg Driven-in by Rapid Thermal Diffusion

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10-Gb/s InGaAs p-i-n Photodiodes With Wide Spectral Range and Enhanced Visible Spectral Response

Cited by 19 publications

References 5 publications

Concentration‐dependent minority carrier lifetime in an In0.53Ga0.47As interdigitated lateral PIN photodiode model based on spin‐on chemical fabrication methodology

Concentration‐dependent minority carrier lifetime in an In0.53Ga0.47As interdigitated lateral PIN photodiode model based on spin‐on chemical fabrication methodology

Design and Simulation of Top Illuminated InGaAs PIN Photodetector for Millimeter-Wave Applications

Large-Area Planar InGaAs p-i-n Photodiodes With Mg Driven-in by Rapid Thermal Diffusion

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Concentration‐dependent minority carrier lifetime in an In_0.53Ga_0.47As interdigitated lateral PIN photodiode model based on spin‐on chemical fabrication methodology

Concentration‐dependent minority carrier lifetime in an In_0.53Ga_0.47As interdigitated lateral PIN photodiode model based on spin‐on chemical fabrication methodology