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Multilayer low temperature co-fired ceramic (LTCC) is well known in usage as interconnect substrate, especially in high frequency application due to high electrical conductivity of the conductors and low loss of the LTCC dielectric. As substrate and packaging materials, there are many chips or devices placed on the multilayer LTCC board. In this paper, multilayer LTCC is implemented as the packaging at PIN photodiode (PD) module of the Radio over Fiber (RoF) system with the reason to increase thermal dissipation capacity of the PD module.

This paper proposed a newdesign of top illuminated PIN photodetector at 1550nm wavelength for millimeter-wave applications. Device topology, structure and fabrication methods were considered in designing the photodetector. The combination material of InP/InGaAsP/InGaAs/InGaAsP was used in designing the top illuminated PIN photodetector. This PIN photodetector was targeted to produce at least 0.60A/W of responsivity with a dark current of <100nA. The design, layout, and electrical characteristics of this photodetector were carried out using SILVACO TCAD tool. The simulated results show higher responsivity value than targeted, device frequency response of -3dBm at 40GHz with targeted dark current achievable within the wavelength absorption bands specification. The results are compared with similar designs from other reported works.