Effect of bismuth surfactant on the structural, morphological and optical properties of self-assembled InGaAs quantum dots grown by Molecular Beam Epitaxy on GaAs (001) substrates

Alghamdi, Haifa Mohammed; Alhassni, Amra; Alhassan, Sultan; Almunyif, Amjad; Klekovkin, A. V.; Trunkin, I. N.; Vasiliev, Alexander L.; Galeti, H. V. A.; Gobato, Y. Galvão; Казаков, И. П.; Henini, M.

doi:10.1016/j.jallcom.2022.164015

Cited by 6 publications

(2 citation statements)

References 37 publications

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“…The surfactant Bi has been employed in III-V epitaxy mostly on (100) surfaces, to modify surface energetics and kinetics [18][19][20][21][22][23]. The impact of Bi during InAs/GaAs(100) QD growth has been explored [24,25], demonstrating a Biinduced increase in QD size and optical quality [22,26], modification of QD density [23,27], and increased dot uniformity [28]. Recently, a Bi surfactant was shown to induce SK growth of InAs QDs on GaAs(110), a substrate that like GaAs(111)A does not natively support SK growth [29][30][31][32].…”

Section: Introductionmentioning

confidence: 99%

Bismuth surfactant-enhanced III-As epitaxy on GaAs(111)A

Hassanen

Herránz

Geelhaar

et al. 2023

Semicond. Sci. Technol.

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Quantum dot (QD) growth on high (c3v) symmetry GaAs{111}surfaces holds promise for efficient entangled photon sources. Unfortunately,homoepitaxy on GaAs{111} surfaces suffers from surface roughness/defectsand InAs deposition does not natively support Stranski–Krastanov (SK) QDgrowth. Surfactants have been identified as effective tools to alter the epitaxialgrowth process of III-V materials, however, their use remains unexplored onGaAs{111}. Here, we investigate Bi as a surfactant in III-As molecular beamepitaxy (MBE) on GaAs(111)A substrates, demonstrating that Bi can eliminatesurface defects/hillocks in GaAs and (Al,Ga)As layers, yielding atomically-smoothhillock-free surfaces with RMS roughness values as low as 0.13 nm. Increasing Bifluxes are found to result in smoother surfaces and Bi is observed to increaseadatom diffusion. The Bi surfactant is also shown to trigger a morphologicaltransition in InAs/GaAs(111)A films, directing the 2D InAs layer to rearrange into3D nanostructures, which are promising candidates for high-symmetry quantumdots. The desorption activation energy (UDes) of Bi on GaAs(111)A was measuredby reflection high energy electron diffraction (RHEED), yielding UDes = 1.7 ±0.4 eV. These results illustrate the potential of Bi surfactants on GaAs(111)A andwill help pave the way for GaAs(111)A as a platform for technological applicationsincluding quantum photonics.

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Section: Introductionmentioning

confidence: 99%

Bismuth surfactant-enhanced III-As epitaxy on GaAs(111)A

Hassanen

Herránz

Geelhaar

et al. 2023

Semicond. Sci. Technol.

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“…Additionally, some studies indicated changes in crystal phases during nanostructure growth in the presence of Bi [21,22] but the role of Bi during the growth was not completely understood. Ryan et al achieved the growth of InAs film patches on GaAs NWs by modifying the surface energy using Bi and also defined the role of Bi during the growth as a surfactant [6,[23][24][25][26]. A lot of research activity has been going on regarding the influence of Bi in InAs alloy growth [25].…”

Section: Introductionmentioning

confidence: 99%

Phase Control Growth of InAs Nanowires by Using Bi Surfactant

et al. 2022

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To realize practical applications of nanowire-based devices, it is critical, yet challenging, to control crystal structure growth of III-V semiconductor nanowires. Here, we demonstrate that controlled wurtzite and zincblende phases of InAs nanowires can be fabricated using bismuth (Bi) as a surfactant. For this purpose, catalyst free selective area epitaxial growth of InAs nanowires was performed using molecular beam epitaxy (MBE). During the growth, Bi was used which may act as a wetting agent influencing the surface energy at growth plane ends, promoting wurtzite crystal phase growth. For a demonstration, wurtzite and zincblende InAs nanowires were obtained with and without using Bi-flux. Photoluminescence spectroscopy (PL) analysis of the nanowires indicates a strong correlation between wurtzite phase and the Bi-flux. It is observed that the bandgap energy of wurtzite and zincblende nanowires are ∼0.50 eV and ∼0.42 eV, respectively, and agree well with theoretical estimated bandgap of corresponding InAs crystal phases. A blue shift in PL emission peak energy was found with decreasing nanowire diameter. The controlled wurtzite and zincblende crystal phase and its associated heterostructure growth of InAs nanowires on Si may open up new opportunities in bandgap engineering and related device applications integrated on Si. Furthermore, this work also illustrates that Bi as a surfactant could play a dynamic role in the growth mechanism of III-V compound semiconductors.

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