Multifunctional semiconductor cubic silicon carbide (3C-SiC) is employed for fuel cell electrolyte, which has never been used before. n-type 3C-SiC can be individually employed as the electrolyte in fuel cells, but delivers insufficient open circuit voltage and minuscule current density due to its electronic dominant property. By introducing n-type ZnO to form an n–n 3C-SiC/ZnO heterostructure, significant enhancements in the ionic conductivity of 0.12 S/cm and fuel cell performance of 270 mW cm−2 are achieved at 550 °C. It is found that the energy band bending and build-in electric field of the heterostructure play the pivotal role in the ionic transport and suppressing the electronic conduction of 3C-SiC, leading to a markable material ionic property and fuel cell performance. These findings suggest that 3C-SiC can be tuned to ionic conducting electrolyte for fuel cell applications through the heterostructure approach and energy band alignment methodology.

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To realize practical applications of nanowire-based devices, it is critical, yet challenging, to control crystal structure growth of III-V semiconductor nanowires. Here, we demonstrate that controlled wurtzite and zincblende phases of InAs nanowires can be fabricated using bismuth (Bi) as a surfactant. For this purpose, catalyst free selective area epitaxial growth of InAs nanowires was performed using molecular beam epitaxy (MBE). During the growth, Bi was used which may act as a wetting agent influencing the surface energy at growth plane ends, promoting wurtzite crystal phase growth. For a demonstration, wurtzite and zincblende InAs nanowires were obtained with and without using Bi-flux. Photoluminescence spectroscopy (PL) analysis of the nanowires indicates a strong correlation between wurtzite phase and the Bi-flux. It is observed that the bandgap energy of wurtzite and zincblende nanowires are ∼0.50 eV and ∼0.42 eV, respectively, and agree well with theoretical estimated bandgap of corresponding InAs crystal phases. A blue shift in PL emission peak energy was found with decreasing nanowire diameter. The controlled wurtzite and zincblende crystal phase and its associated heterostructure growth of InAs nanowires on Si may open up new opportunities in bandgap engineering and related device applications integrated on Si. Furthermore, this work also illustrates that Bi as a surfactant could play a dynamic role in the growth mechanism of III-V compound semiconductors.