Effect of buffer layers on p-i-n a-Si:H solar cells deposited at high rate utilising an expanding thermal plasma

Abstract

phone: +31-15 278 1993 fax: +31-15 262 2163; E-mail: amhnDetit@dimes.tudelft.nl. M.C.M.v.d.Sanden@Dhvs.tue.nl 2 ABSTRACTWith a cascaded arc expanding thermal plasma intrinsic amorphous silicon can be deposited at growth rates varying from 0.2 to 10 nmls. With inaeasing growth rate good material is obtained at higher deposition temperatures. At higher deposition temperatures the player is deteriorated when the cell is deposited in a p-i-n sequence. A buffer layer can be used as a 'soft start' for the ETP layer and as protection of the p-layer from high deposition temperatures. In this paper we will discuss the effect on p-i-n solar cells when a buffer layer is incorporated.

Comparison of amorphous silicon absorber materials: Light-induced degradation and solar cell efficiency

“…13,14 • Triode: Deposition conditions similar to low pressure VHF a-Si:H but with an additional biased mesh between the electrodes lead to very low deposition rate but dense material. 15,16 a-Si:H deposition techniques other than PECVD, such as sputtering, 17 hot-wire deposition, 18,19 or expanded thermal plasma deposition 20 did not lead to high solar cell efficiencies or were not commercially practical, and will not be discussed here further.…”