Effect of Carbon Concentration and Growth Conditions on Oxygen Precipitation Behavior in n-type Cz-Si

Kojima, Takuto; Suzuki, Ryoichi; Kinoshita, Koshi; Nakamura, Kyotaro; Ogura, Atsushi; Ohshita, Yoshio; Masada, Isao; Tachibana, Shoji

doi:10.1109/pvsc.2017.8366072

Cited by 4 publications

(4 citation statements)

References 3 publications

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“…1) Although a great effort has been made to reduce the carbon concentration down to lower than 5 × 10 15 cm −3 in highquality Si wafers, further reduction is required recently for high-performance power devices such as insulated gate bipolar transistors 2,3) and high-efficiency solar cells with conversion efficiency close to the theoretical limit. 4,5) Since this concentration range is below the detection limit of the standardized IR absorption method, 6,7) the photoluminescence (PL) activation method using electron irradiation has attracted considerable attention as a technique for the lowlevel carbon quantification. [8][9][10][11][12][13] The PL method has been generally carried out at liquid He temperature (4.2 K) for the detection of the C-line (0.79 eV) and G-line (0.97 eV).…”

Section: Introductionmentioning

confidence: 99%

Effects of surface recombination and excitation power on quantitative analysis of carbon in Si using room-temperature photoluminescence after electron irradiation

Ishikawa¹,

Tajima²,

Ogura³

2019

Jpn. J. Appl. Phys.

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We have analyzed the effects of the surface recombination and the excitation power on the photoluminescence (PL) spectra in Si at room temperature in relation to the possible errors in the PL method after electron irradiation for the quantification of carbon in Si. The surface passivation enhances the band-to-band emission substantially but only slightly the carbon-related emission band. This variation produces an error in the carbon quantification, since the ratio between the two emissions is used as a measure of the carbon concentration. We show that the variation is caused by different excitation power dependence of the two emissions.

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Section: Introductionmentioning

confidence: 99%

Effects of surface recombination and excitation power on quantitative analysis of carbon in Si using room-temperature photoluminescence after electron irradiation

Ishikawa¹,

Tajima²,

Ogura³

2019

Jpn. J. Appl. Phys.

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“…This concentration range is on the order of the detection limit of the standardized IR absorption method. 2,3) Since it has been reported recently that such a low level of carbon impurities still affects high-efficiency solar cells 4,5) and advanced power devices, 6,7) the method of determining low-level carbon has been eagerly sought.…”

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confidence: 99%

Origin of room-temperature photoluminescence around C-line in electron-irradiated Si and its applicability for quantification of carbon

Tajima

Ishikawa

Kiuchi

et al. 2018

Appl. Phys. Express

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We demonstrate that a broad emission band is observable at room temperature in the vicinity of the carbon-related C-line detected at cryogenic temperatures in electron-irradiated Si. Its spectral shape is different from similar shapes of the bands due to dislocations, oxygen precipitates, and thermal donors. The band is annealed out at 450 °C and its intensity ratio to the band-edge emission has a positive correlation with carbon concentration in the same manner as the C-line. We deduce that the band has a very similar origin to the C-line and discuss the possibility of carbon quantification by using the ratio as an index.

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“…Recently, the accurate determination of C concentrations lower than 1 × 10 15 cm −3 in Si crystals has been required for the production of high-efficiency solar cells and high-quality power devices. The determination of a trace amount of C is indispensable to the improvement in the lifetime of wafers for high-efficiency solar cells [1][2][3][4] and to the control of the lifetime of insulated gate bipolar transistors by electron irradiation and post-thermal annealing. 5,6) Regarding the determination of the C concentration, the useful range of the standardized IR absorption method is only down to about 2 × 10 15 cm −3 as obtained by JEITA, 7) and about 5 × 10 15 cm −3 as obtained by SEMI.…”

Section: Introductionmentioning

confidence: 99%

Determination of C concentration in P-doped n-type Czochralski-grown Si crystals by liquid N temperature photoluminescence after electron irradiation

Ishikawa

Tajima

Kiuchi

et al. 2018

Jpn. J. Appl. Phys.

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We demonstrated the effectiveness of photoluminescence (PL) measurement at liquid N temperature after electron irradiation for the determination of the C concentration in P-doped n-type Czochralski-grown Si crystals. The disappearance of P-related lines simplifies the spectral analysis at 77 K, enabling us to estimate the C concentration from the G-line intensity ratio regardless of the difference in P concentration. The C concentration estimated by PL measurement at 77 K was in good agreement with those by measurement PL at 4.2 K and IR absorption. Unsusceptibility to the concentration of dopant impurities is a practical advantage of the PL measurement at 77 K over that at 4.2 K.

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Effect of Carbon Concentration and Growth Conditions on Oxygen Precipitation Behavior in n-type Cz-Si

Cited by 4 publications

References 3 publications

Effects of surface recombination and excitation power on quantitative analysis of carbon in Si using room-temperature photoluminescence after electron irradiation

Effects of surface recombination and excitation power on quantitative analysis of carbon in Si using room-temperature photoluminescence after electron irradiation

Origin of room-temperature photoluminescence around C-line in electron-irradiated Si and its applicability for quantification of carbon

Determination of C concentration in P-doped n-type Czochralski-grown Si crystals by liquid N temperature photoluminescence after electron irradiation

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