Effects of surface recombination and excitation power on quantitative analysis of carbon in Si using room-temperature photoluminescence after electron irradiation

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We report on the anomalous excitation-power dependence of the band-edge emission in Si after 2 MeV electron irradiation. It is well-established that the dependence of the emission intensity I on the excitation power L is generally follows the power law, I ∝ Ln with the exponent n between 1 and 2. However, the exponent n increases after the electron irradiation and becomes larger than 2 at temperatures from 60 to 150 K in all the measured samples. The present dependence can be explained by a simple model: the radiation-induced defects act as dominant recombination centers in the low excitation-power range, but their activity becomes saturated in the high excitation-power range.

Section: Resultssupporting

confidence: 90%

Section: Introductionmentioning

confidence: 50%

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Anomalous excitation-power dependence of band-edge emission in Si involving radiation-induced defects

Asahara

Tajima

Satake

et al. 2020

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“…This deep level emission line can be assigned as C-line, which is originated from the radiation-induced defects of the interstitial carbon (Ci) and interstitial oxygen (Oi) complexes (Ci-Oi). [30][31][32] That is, it is suggested that the main cause of the lifetime degradation on the silicon substrate is Ci-Oi defects originated by plasma irradiation during the RPD process.…”

Section: Resultsmentioning

confidence: 99%

Evaluation of plasma induced defects on silicon substrate by solar cell fabrication process

Onishi

Hara

Nishihara

et al. 2020

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This research investigates the cause of lifetime reduction properties of a crystalline defect layer introduced by the plasma process such as reactive plasma deposition (RPD). The plasma irradiation damage to silicon substrate with the different oxygen and carbon concentrations were evaluated. Minority carrier lifetime of the silicon substrate after the RPD process has been significantly reduced by plasma irradiation. Furthermore, photoluminescence (PL) spectroscopy revealed that the cause of the lifetime degradation on the silicon substrate is Ci–Oi defect generation originated in the plasma irradiation during the RPD process.

“…[13][14][15][16][17] While it had been taken for granted that the PL measurement was performed at liquid He temperature, one of the authors (MT) reported that the detection of the C-and G-lines is possible at liquid nitrogen temperature [21][22][23] and that the Cline-related broad band termed the C08 band is observable at room temperature. 24,25) It should be noted that both the G-and C-line intensities are influenced by the O i concentration. Since the influence is smaller for the G-line, we focused on the G-line for the present C quantification.…”

Section: Theoretical Backgroundmentioning

confidence: 99%

Round-robin test of the photoluminescence method after electron irradiation for quantifying low-level carbon in silicon

Tajima

Samata

Nakagawa³

et al. 2020

Round-robin test of the photoluminescence method after electron irradiation was performed for quantifying low-level C impurities in the magneticfield-applied Czochralski Si crystals with a resistivity of about 50 Ω•cm (n-type) and with resistivity higher than 5 kΩ•cm (p-type). Their C concentrations were determined as ranging from 1.4 × 10 14 to 3.6 × 10 15 cm −3 by secondary ion mass spectroscopy. A universal correlation holds between the C concentration and the intensity ratio of the G-line to the band-edge emission normalized by the ratio of the reference sample, which can be used as a calibration curve for the C quantification. The measurement error and repeatability of the G-line intensity ratio are less than ±20% and less than ±10% deviation, respectively, and the overall error in the C concentration estimated from the calibration curve is less than ±30%. This demonstrates the effectiveness of the present method as a novel standard technique for quantifying low-level C impurities.