Effect of Carbon Impurity Incorporation on Band-Gap States in AlGaN/GaN Hetero-Structures

Nakano, Yoshitaka; Irokawa, Yoshihiro; Sumida, Yoshio; Yagi, Shuichi; Kawai, H.

doi:10.1149/2.025202esl

Cited by 9 publications

(20 citation statements)

References 12 publications

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“…In general, Ga vacancies are easily reacted with carbon and/or oxygen impurities and transformed into V Ga -O and/or V Ga -C complex defects. 19,20 In particular, the V Ga -C complex defects have been reported to be located at 2.8-2.9 eV below the conduction band, 21,22 which are likely responsible for the BL band observed in the in-situ PL spectra of GaN in this study. That is, the BL observed may correspond to radiative transitions from the near conduction band to the V Ga -C complex level, because it is the same metastable center as the YL band.…”

mentioning

confidence: 51%

In-situ photoluminescence monitoring of GaN in plasma exposure

et al. 2012

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mentioning

confidence: 51%

In-situ photoluminescence monitoring of GaN in plasma exposure

et al. 2012

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“…specific deep-level defects [8][9][10]. Additionally, these deep-level defects are probably produced on account of C impurity incorporation into the GaN buffer layer, as we have previously reported [9]. That is, these specific deep-level defects are presumably attributable to V Ga and/or V Ga -O N , V Ga -C N and/or C N -O N and C N , respectively [12][13][14][15][16].…”

Section: Methodsmentioning

confidence: 59%

“…Here, the stressing time under the off-state was varied between 1 and 30 s. These photo-assisted turn-on capacitance recovery measurements have the same methodology as the turn-on current recovery measurements that we have previously reported, based on the deep-level defect energies [8]. specific deep-level defects [8][9][10]. Additionally, these deep-level defects are probably produced on account of C impurity incorporation into the GaN buffer layer, as we have previously reported [9].…”

Section: Methodsmentioning

confidence: 99%

“…In our previous studies, we determined that three specific deep-level defects are located at~2.07,~2.80 and~3.23 eV below the conduction band (E c ) in GaN buffer layers of AlGaN/GaN heterostructures and surmised that these defects presumably originate from Ga vacancies and/or shallow C acceptors via the incorporation of C into the GaN buffer layers during the metal-organic chemical vapour deposition (MOCVD) growth [9]. Additionally, these deep-level defects are probably associated with the bulkrelated current-collapse phenomenon, because the current collapses tend to become severe with increasing the concentrations of these deep levels in our previous study [10].…”

Section: Introductionmentioning

confidence: 99%

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Deep-level defects and turn-on capacitance recovery characteristics in AlGaN/GaN heterostructures

Nakano

Irokawa

Sumiya

2015

Philosophical Magazine Letters

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We report on turn-on capacitance recovery measurements as a simple shorttime method of evaluating carrier-trapping phenomena in a two-dimensional electron gas (2DEG) in the bulk region of AlGaN/GaN heterostructures, employing their Schottky barrier diodes. Using this technique, we have investigated an in-depth relation between deep-level defects and 2DEG carrier trapping in an AlGaN/GaN heterostructure with a GaN buffer layer containing a high C concentration. Steady-state photo-capacitance spectroscopy measurements revealed three C-related deep-level defects located at~2.07,~2.80 and 3.23 eV below the conduction band in the GaN buffer layer. Additionally, turn-on capacitance recovery measurements showed a large decrease in recovery time under white-light optical illuminations with long-pass filters between 370 and 390 nm. It is concluded that the~3.23 eV level is mainly responsible for the 2DEG carrier-trapping phenomena in the GaN buffer layer of the AlGaN/GaN heterostructure.

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“…Figure (d) shows the colors of lights emitted by transition from one of the shallow donor (O N and C Ga ) levels below the continuous conduction band (CB) of GaN to the omnipresent impurities or defect states originated from the unintentional contamination of the GaN active layer during the growth process by the HVPE or MOCVD method . The energy band gap of GaN is 3.44 eV .…”

Section: Resultsmentioning

confidence: 99%

Vertical‐Type Blue Light Emitting Diode by Mixed‐Source Hydride Vapor Phase Epitaxy Method

Jeon

Bae

Jeon

et al. 2017

Physica Status Solidi (a)

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A vertical‐type blue light‐emitting diode (BLED) was fabricated without a conventional substrate by the mixed‐source hydride vapor phase epitaxy (HVPE) method, wherein the reactor was equipped with a multi‐graphite boat filled with the mixed source for consecutive growth and regulation of the growth rate inside the source zone and a radio‐frequency (RF) heating‐coil to attain high temperatures (T > 900 °C) outside the source zone, which is different from the existing HVPE equipment. The vertical‐type BLED with an active layer of GaN was fabricated by only four production steps: i) photolithography process for manufacturing the mask, ii) epitaxial layer growth process for consecutive growth using the multi‐graphite boat, iii) sorting process to place the bare chips into the holes in a pocket‐type shadow mask for the deposition of the electrodes, and iv) metallization process. The characteristics of the emitted light and the growth thickness measured by a field emission scanning electron microscope (FE‐SEM) and a transmission electron microscope (TEM) revealed that we succeeded in producing the vertical‐type BLED by the mixed‐source HVPE method.

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Effect of Carbon Impurity Incorporation on Band-Gap States in AlGaN/GaN Hetero-Structures

Cited by 9 publications

References 12 publications

In-situ photoluminescence monitoring of GaN in plasma exposure

In-situ photoluminescence monitoring of GaN in plasma exposure

Deep-level defects and turn-on capacitance recovery characteristics in AlGaN/GaN heterostructures

Vertical‐Type Blue Light Emitting Diode by Mixed‐Source Hydride Vapor Phase Epitaxy Method

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