Effect of carrier gas and doping profile on the surface morphology of MOVPE grown heavily doped GaN:Mg layers

On Approach to Analyze Non-Linear Model of Mass and Heat Transport During Gas Phase Epitaxy - A Possibility to Improve Properties of Films

“…2a is also shows comparison of theoretical results (solid lines) with experimental one (points) for MOCVD epitaxy of gallium arsenide at low pressure. Using experimentally measured values (speed of growth of epitaxial layer and frequency of rotation of keeper of substrate) and accounting linear dependence of speed of growth on concentration of main growth component of growth component of gas mixture C 0 trimethylgallium [2,5] we obtain experimental dependence C/C 0 on ω (Fig. 2a).…”

“…We find enough good coincidence of experimental dependence with experimental one. Reason of some mismatch of experimental and theoretical data is probably side reaction in gas phase [5]. Framework the reaction a part of gallium arsenide do not transit in a solid phase in reaction zone.…”

“…Framework the approach to determine the first-order approximations of components of flow of mixture of gases we replace the components on not yet known their average values υv r →α 1r , v ϕ →α 1ϕ , v z →α 1z in right sides of Eqs. (5). The replacement leads to transformation of the Eqs.…”

Analysis of Possibility of Growth of Several Epitaxial Layers Simultaneously In Gas Phases Framework One Technological Process. On Possibility to Change Properties of Epitaxial Layers

“…The most common methods for growing heterostructures are epitaxy from gas and liquid phase, magnetron sputtering, molecular beam epitaxy. The are many experimental works describe manufacturing and growth of heterostructures [1][2][3][4][5][6][7][8][9][10][11]. At the same time essentially smaller quantity of works describes prognosis of epitaxy processes [12].…”

X-ray linear dichroism of defects in GaN:Mg using hard x-ray nanoprobe

“…Depending on the growth polarity, different pyramidal structures have been reported in GaN films grown by metal-organic chemical vapor deposition ͑MOCVD͒. [1][2][3][4] They have been identified as Mg-rich pyramidal inversion domains, 5 resulting from phase segregation effects. Although the origin is not completely understood, it seems that in some cases the nucleation occurs at the sample surface, inducing changes in the stacking sequence from hexagonal to cubic structures or formation of Mg 3 N 2 precipitates.…”