Effect of carrier gas on the structure and electrical properties of low dielectric constant SiCOH film using trimethylsilane prepared by plasma enhanced chemical vapor deposition

Cheng, Yi-Lung; Wang, Y. L.; Lan, J. K.; Chen, H. C.; Lin, J.H.; Wu, Yung-Chun; Liu, Po–Tsun; Feng, M. S.

doi:10.1016/j.tsf.2004.08.159

Cited by 18 publications

(8 citation statements)

References 11 publications

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“…Therefore, improving the elastic modulus or hardness of the porous low-k dielectric film is required. Figure 10 shows the change in the hardness of porous low-k dielectric materials as a function of UV curing time [107,108]. By increasing UV curing time after the porous low-k dielectric film deposition, the hardness (H) can be improved.…”

Section: Cmp-induced Damagementioning

confidence: 99%

Porous Low-Dielectric-Constant Material for Semiconductor Microelectronics

Cheng¹,

Lee²

2020

Nanofluid Flow in Porous Media

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To provide high speed, low dynamic power dissipation, and low cross-talk noise for microelectronic circuits, low-dielectric-constant (low-k) materials are required as the inter-and intra-level dielectric (ILD) insulator of the back-end-of-line interconnects. Porous low-k materials have low-polarizability chemical compositions and the introducing porosity in the film. Integration of porous low-k materials into microelectronic circuits, however, poses a number of challenges because the composition and porosity affected the resistance to damage during integration processing and reduced the mechanical strength, thereby degrading the properties and reliability. These issues arising from porous low-k materials are the subject of the present chapter.

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Section: Cmp-induced Damagementioning

confidence: 99%

Porous Low-Dielectric-Constant Material for Semiconductor Microelectronics

Cheng¹,

Lee²

2020

Nanofluid Flow in Porous Media

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“…Low-k materials can be divided into several categories: silica-based, silsesquioxane (SSQ)based, organic polymers, and amorphous carbon low-k materials [17][18][19][20]. The last three categories have integration issue due to the weak mechanical strength; therefore, they are not officially production in the semiconductor industry.…”

Section: Low-k Materialsmentioning

confidence: 99%

Plasma Damage on Low-k Dielectric Materials

Cheng¹,

Lee²,

Haung³

2019

Plasma Science and Technology - Basic Fundamentals and Modern Applications

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Low dielectric constant (low-k) materials as an interconnecting insulator in integrated circuits are essential for resistance-capacitance (RC) time delay reduction. Plasma technology is widely used for the fabrication of the interconnects, such as dielectric etching, resisting ashing or stripping, barrier metal deposition, and surface treatment. During these processes, low-k dielectric materials may be exposed to the plasma environments. The generated reactive species from the plasma react with the low-k dielectric materials. The reaction involves physical and chemical effects, causing degradations for lowk dielectric materials. This is called "plasma damage" on low-k dielectric materials. Therefore, this chapter is an attempt to provide an overview of plasma damage on the low-k dielectric materials.

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“…A dielectric film with the relative dielectric constant (k)l o w e r than 4.0 (called low-k) had replaced a conventional chemical vapor deposition (CVD)-SiO 2 film with a k value of 4.0 as an interconnect insulator because it can provide lower capacitance between the neighboring metal lines. The low-k materials currently used in the BEOL interconnects are SiOF (k =3.5 -3.8), SiCOH (k =2.2 -3.2), or air gap (k~1.0) [7][8][9][10][11]. On the other hand, to reduce the resistance of BEOL interconnects, a metal material with a lower resistivity (r)t h a n that of aluminum (Al), which is the traditional conductor used in 3.0-0.25 μm technology nodes, is considered to be a candidate to replace Al conductor.…”

Section: Introductionmentioning

confidence: 99%

Copper Metal for Semiconductor Interconnects

Cheng¹,

Lee²,

Huang³

2018

Noble and Precious Metals - Properties, Nanoscale Effects and Applications

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Resistance-capacitance (RC) delay produced by the interconnects limits the speed of the integrated circuits from 0.25 mm technology node. Copper (Cu) had been used to replace aluminum (Al) as an interconnecting conductor in order to reduce the resistance. In this chapter, the deposition method of Cu films and the interconnect fabrication with Cu metallization are introduced. The resulting integration and reliability challenges are addressed as well.

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Effect of carrier gas on the structure and electrical properties of low dielectric constant SiCOH film using trimethylsilane prepared by plasma enhanced chemical vapor deposition

Cited by 18 publications

References 11 publications

Porous Low-Dielectric-Constant Material for Semiconductor Microelectronics

Porous Low-Dielectric-Constant Material for Semiconductor Microelectronics

Plasma Damage on Low-k Dielectric Materials

Copper Metal for Semiconductor Interconnects

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