Effect Of Channel Layer Thickness On The Performance Of Indium–Zinc–Tin Oxide Thin Film Transistors Manufactured By Inkjet Printing

Avis, Christophe; Hwang, Hye Rim; Jang, Jin

doi:10.1021/am501153w

Cited by 72 publications

(54 citation statements)

References 30 publications

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“…The nitrate salts, which are low cost and readily available, have been proved to require less thermal energy to be decomposed completely compared with other salts, e.g. Among various high-k dielectrics, AlO x has been studied most extensively because of its high conduction band offset, 15 low interface trap density, 16 and its high chemical stability. 10,11 Meanwhile, as a solvent, water meets the current environmental awareness restricting the use of ecologically harmful substances and process.…”

Section: Introductionmentioning

confidence: 99%

Eco-friendly water-induced aluminum oxide dielectrics and their application in a hybrid metal oxide/polymer TFT

Liu

Zhu

et al. 2015

RSC Adv.

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Solution-processed oxide semiconductors have been widely studied with the objective of achieving highperformance, sustainable and low-cost electronic devices. In this report a simple and eco-friendly waterinducement method has been developed to fabricate high-k dielectrics and hybrid thin-film transistors (TFTs); introducing metal nitrates and deionized water as the precursor materials. The AlO x dielectric films annealed at temperatures higher than 350 C result in low leakage current densities and the dielectric constants are nearly 7. Instead of the conventional oxide semiconductors, water-induced (WI) polyvinylprrolidone (PVP) was introduced into the In 2 O 3 solution to form a hybrid metal oxide/polymer channel layer. The 250 C-annealed WI In 2 O 3 : PVP TFTs based on AlO x dielectric exhibit outstanding electrical performances and high stability. These promising properties were obtained at an ultra-low operating voltage of 2 V. The WI metal oxide/polymer hybrid TFTs are promising alternatives for applications in low-cost, low-consumption and eco-friendly flexible electronics.

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Section: Introductionmentioning

confidence: 99%

Eco-friendly water-induced aluminum oxide dielectrics and their application in a hybrid metal oxide/polymer TFT

Liu

Zhu

et al. 2015

RSC Adv.

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“…19 In 2 O 3 Rheology 10.2 10 5 V on = 0 Lee et al 22 SnO 2 Thermal inkjet 3.62 10 3 V on = −39 Lee et al 23 IZTO Piezoelectric inkjet 30 10 6 V on = 2 Han et al 24 IGO Piezoelectric inkjet 5.5 10 5 V on = −21 Kim et al 25 ZTO Piezoelectric inkjet 4.98 10 9 V on = −9 Avis et al 28 IZTO Piezoelectric inkjet 114. 8 10 7 V th = −0.16 Garlapati et al 29 In 2 O 3 Piezoelectric inkjet 126 * 2 × 10 7 V on = 0.37 Kim et al 31 ZTO Piezoelectric inkjet 0.58 5 × 10 6 V th = 1.9 Jeong et al 32 ZTO Piezoelectric inkjet 0.58 10 7 V th = 1.7 Kim et al 33 IGZO Piezoelectric inkjet 0.03 5 × 10 4 V th = 6.2 Kim et al 34 IGZO Piezoelectric inkjet 0.055 10 3 V th = −0.5 Wang et al 35 IGZO Piezoelectric inkjet 1.41 4 × 10 7 V th = −0.5 Wang et al 36 IGZO Piezoelectric inkjet 0.82 6 × 10 5 V th = 7 Hennek 37 IGZO Piezoelectric inkjet 2.45 9 × 10 5 V th = 21.9 Jeong et al 38 IGZO Piezoelectric inkjet 7.6 10 7 V th = 11.1 Meyers et al 39 ZnO Thermal inkjet 6.1 >10 6 V on = −7 Dilfer et al 40 IZO Flexographic 2.4 5 × 10 7 V th = 4 Choi et al 41 IGZO Gravure 0.81 10 6 V on = 1.35 Eun et al 42 ZnO Transfer 0.49 * * 10 5 V th = 12 Lee et al 43 IZO EHD 32 * * * 10 3 V th = <2 Lee et al 44 ZTO EHD 9.82 3 × 10 6 V th = 2.16 Jeong et al 45 IGZO EHD 10.4 10 7 V th = 4.1 Dasgupta et al 46 In 2 O 3 Piezoelectric inkjet 0.8 * * * * 2 × 10 3 V on = 0 Liu et al 47 ZnO Piezoelectric inkjet 0.69 4 × 10 1 V th = 25.5 Noh et al 48 ZnO NW SAP 4 10 4 EHD: Electrohydrodynamic SAP: Self-aligned inkjet printing * The device was performed with polymer dielectric layer * * The performances were measured from the device prior to the transferring * * * The device was performed with HfO dielectric layer * * * * The device was fabricated at room temperature…”

Section: Summary and Future Directionsmentioning

confidence: 99%

Printed Oxide Thin Film Transistors: A Mini Review

Choi

Lin

Cheng

et al. 2015

ECS J. Solid State Sci. Technol.

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Compared to conventional amorphous silicon (a-Si) TFTs, amorphous metal oxide TFTs have superior device performance such as higher mobility, better sub-threshold swing, and lower off-state current. Amorphous metal oxide TFTs have an additional advantage on the device uniformity due to the lack of grain boundary issues in the poly-Si TFTs. Compared with sputtered oxide TFTs, metal oxide TFTs with solution processes have better flexibility and controllability to adjust the composition of chemical solution. Among various solution-based approaches, direct printing is a promising low-cost technique in fabricating TFTs. The printing technique offers several advantages in manufacturing electronics such as a direct writing of materials, reduction of chemical waste, and reproducibility with high-resolution scale, which are not affordable from other solution-based approaches. While many printed OTFTs have been reported, relatively fewer studies, associated with printed metal oxide TFTs, have been pursued. Interests to printed metal oxide TFTs have grown continuously since the first report of a general route toward printed oxide TFTs. A variety of metal oxide materials have been reported as the channel layer of printed metal oxide TFTs. In this mini review paper, the development of printed metal oxide TFTs was discussed including the ink formulations, the types and characteristics of the applied printers, and fabricated thin film transistor characteristics. Lastly the review is concluded with a concise summary and future outlook from an industry perspective. Thin film transistors (TFTs), first reported by Lilienfeld and Heil almost nine decades ago, have continuously being developed and improved for low cost electronic switches.1,2 Advanced fabrication techniques and materials expand its application to low cost, large size, high resolution, and high-speed flat panel displays.3 The greatest advancement was accompanied with the advent of a-Si:H as a semiconductor channel layer.4 Although a-Si:H semiconductor exhibited lower electronic properties (carrier mobility ≤ 1 cm 2 /Vs) than TFTs based on polycrystalline channel layers (e.g. CdS), the electronic transport properties of a-Si:H were sufficient as switching elements in Liquid Crystal Displays, along with other benefits such as lower cost, high uniformity and excellent reproducibility in large area fabrication. However, lower performances of a-Si:H TFTs limit its application in AMOLED display. Metal oxide semiconductors have been intensively researched over the past decade due to their superior electrical properties including high carrier mobility (∼1-100 cm 2 /Vs), high optical transparency, good thermal/environmental durability, and potentially low-manufacturing cost.5,6 Significant progress of metal oxide TFTs has demonstrated the advantages over a-Si:H TFTs as next candidate for high-performance display applications. 7,8 In terms of manufacturing metal oxide semiconductors as the active channel layers in TFTs, gas-phase deposition technique that requires high vacuum f...

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“…Avis et al were able to control the film thickness of printed IZTO thin film by varying the substrate temperature and reported the film thickness effects on device performances. [15] By using Al 2 O 3 dielectric layer processed by a spin-coating method and finding the optimal film thickness, they achieved an impressive mobility of ~110 cm 2 /Vs. In the printing process, as the film thickness increased, the film morphology deteriorated, creating a porous film structure.…”

Section: Printed Metal Oxide Tftsmentioning

confidence: 99%