Effect of composition gradient in Cu(In,Al)Se2 solar cells

Hayashi, Takao; Minemoto, Takashi; Zoppi, Guillaume; Forbes, Ian; Tanaka, K.; Yamada, Satoshi; Araki, Tsutomu; Takakura, Hideyuki

doi:10.1016/j.solmat.2008.11.007

Cited by 32 publications

(12 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This property allows the formation of CIAS by some adjusting to achieve high efficiency of solar cells; however, most researchers and solar cell industries are not very interested in CIAS, because we need to pay much attention and effort in single-phase CIAS formation. Grain size is one of many keys of high efficiency, and large grain size is preferred for solar cell application [6]. At 500 o C, Cu x Se quasi-liquid phase in Cu-rich condition has a high solubility of In and Ga for a high diffusion [7].…”

Section: Introductionmentioning

confidence: 99%

Critical Condition in CuInAlSe2 Growth of Solar Cell Absorber

et al. 2016

View full text Add to dashboard Cite

show abstract

Section: Introductionmentioning

confidence: 99%

Critical Condition in CuInAlSe2 Growth of Solar Cell Absorber

et al. 2016

View full text Add to dashboard Cite

show abstract

“…Zhang et al reported that CFTSe nanoparticles with the band gap of 1.19-1.25 eV were synthesized by a simple solvothermal method [5]. Hayashi CIAS thin films [6]. The flash evaporation process has been applied to synthesize CIAS by Chandra et al [7].…”

Section: Introductionmentioning

confidence: 99%

Structural, optical and electrical properties of Cu2FeSnSe4 and Cu(In,Al)Se2 thin films

Meng

Cao

Deng

et al. 2015

Materials Science in Semiconductor Processing

View full text Add to dashboard Cite

“…The highest efficiency of CIGS solar cells (20.3 %) was achieved by the German Center for Solar Energy and Hydrogen Research [3]. However, Ga is a rare and expensive material, and further Ga addition for Eg [ 1.3 eV can affect degradation of the electronic properties of the absorber layer, leading to a reduction in the open-circuit voltage and fill factor [4,5]. Therefore, incorporating Al element in CIS material to form CIAS materials is an alternative because lesser Al content is needed for alloying to achieve a band gap similar to that achieved when Ga is used.…”

Section: Introductionmentioning

confidence: 99%

“…The highest efficiency of CIAS solar cells (16.9 %) was reported by Marsillac et al [7] who used co-evaporation technique. Various techniques, such as co-evaporation [1,4,8], flash evaporation [9,10], sputtering [11][12][13], selenization [14][15][16], and electrodeposition [17,18], have been employed to fabricate CIAS films. However, the drawback of vacuum techniques is difficult to scale up because of high manufacturing costs and low material utilization efficiency.…”

Section: Introductionmentioning

confidence: 99%

Improving the characteristics of CdS and CIAS films and the performances of CIAS solar cells by electrodeposition Cu–Se/CIAS binary structure precursors on FTO substrate

Huang

Liu

Hung

et al. 2014

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

Cu-poor electrodepositedCuIn 1-x Al x Se 2 (CIAS) precursor films were prepared to investigate the alteration in surface morphology of post-annealed CIAS films through post-annealing temperature adjustment. Scanning electron microscopy (SEM) and atomic force microscope (AFM) analyses demonstrated that surface morphology and root-mean-square (RMS) roughness of post-annealed CIAS films exhibited uneven and rough triangular structures. The crystal size of post-annealed CIAS films can be increased by increasing post-annealing temperature. The precursor film structure was modified by substituting Cu-Se/CIAS binary structure with CIAS single structure to proceed with the investigation. The apparent variation in surface morphology of post-annealed CIAS films changed from rough triangular structures to smooth round structures, and the RMS roughness of post-annealed CIAS films was reduced to \100 nm. The reduction was attributed to the formation of Cu-Se liquid phases during the post-annealing process, which enhanced elemental migration, recombination, and promotion of large grains and smooth surface formation. X-ray diffraction patterns showed three preferred growth orientations along the (112), (204/220), and (116/312) planes with chalcopyrite structures for all species. In addition, the characteristics of surface morphology, RMS roughness, and current measurement of subsequently deposited cadmium sulfide (CdS) film were studied and examined via SEM and AFM analyses. The surface morphology of CdS films deposited on binary structure post-annealed CIAS films exhibited smoothness, compactness, small RMS roughness, and large crystals with round and film-like structure. The AFM current images indicated that the distribution of leakage current paths was greatly diminished by changing the precursor film structure from CIAS single structure to CuSe/CIAS binary structure. The dark current-voltage characteristics of the CdS/CIAS heterojunctions showed that the reverse dark current density was decreased by approximately one order of magnitude from 4.02 9 10 -4 (single structure) to 4.26 9 10 -5 A/cm 2 (binary structure). Furthermore, the conversion efficiency of CIAS solar cells was enhanced from 0.52 (single structure) to 1.44 % (binary structure) with increase in V oc and J sc .

show abstract

Effect of composition gradient in Cu(In,Al)Se2 solar cells

Cited by 32 publications

References 9 publications

Critical Condition in CuInAlSe2 Growth of Solar Cell Absorber

Critical Condition in CuInAlSe2 Growth of Solar Cell Absorber

Structural, optical and electrical properties of Cu2FeSnSe4 and Cu(In,Al)Se2 thin films

Improving the characteristics of CdS and CIAS films and the performances of CIAS solar cells by electrodeposition Cu–Se/CIAS binary structure precursors on FTO substrate

Contact Info

Product

Resources

About