Effect of copper phthalocyanine (CuPc) interlayer on the electrical characteristics of Au/n-GaN Schottky rectifier

Jyothi, I.; Janardhanam, V.; Lim, Yi-Rang; Reddy, V. Rajagopal; Ahn, Kwang‐Soon; Choi, Chel‐Jong

doi:10.1016/j.mssp.2014.10.047

Cited by 18 publications

(3 citation statements)

References 39 publications

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“…Moreover, the barrier heights extracted from C-V measurements was higher than those obtained from I-V measurements, regardless of temperature. Such a discrepancy between barrier heights obtained from I-V and C-V measurements could be attributed to the spatial inhomogeneity of the barrier height at the Al/p-type sSOI interface [35,36]. The barrier height estimated under flat-band condition is called flat-band barrier height (Φ bf ) and is considered to be real fundamental quantity.…”

Section: Resultsmentioning

confidence: 99%

Current–voltage and capacitance–voltage characteristics of Al Schottky contacts to strained Si-on-insulator in the wide temperature range

Jyothi

Janardhanam

Hong

et al. 2015

Materials Science in Semiconductor Processing

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Section: Resultsmentioning

confidence: 99%

Current–voltage and capacitance–voltage characteristics of Al Schottky contacts to strained Si-on-insulator in the wide temperature range

Jyothi

Janardhanam

Hong

et al. 2015

Materials Science in Semiconductor Processing

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“…The barrier heights obtained from the I-V and C-V methods are not always the same because of the different nature of the measurements. The difference between the barrier heights measured from I-V and C-V methods could be associated with the spatial inhomogeneity of the barrier heights having low and high Schottky barrier height patches along the interface [35]. Generally, in the I-V measurement, the current across the Schottky interface depends exponentially on the barrier height and thus is sensitive in the detailed barrier distribution at the interface.…”

Section: Resultsmentioning

confidence: 99%

Modification of Schottky Barrier Properties of Ti/p-type InP Schottky Diode by Polyaniline (PANI) Organic Interlayer

Reddy¹,

Janardhanam²,

Jyothi³

et al. 2016

JSTS:Journal of Semiconductor Technology and Science

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Abstract-The electrical properties of Ti/p-type InPSchottky diodes with and without polyaniline (PANI) interlayer was investigated using current-voltage (I-V) and capacitance-voltage (C-V) measurements. The barrier height of Ti/p-type InP Schottky diode with PANI interlayer was higher than that of the conventional Ti/p-type InP Schottky diode, implying that the organic interlayer influenced the spacecharge region of the Ti/p-type InP Schottky junction. At higher voltages, the current transport was dominated by the trap free space-charge-limited current and trap-filled space-charge-limited current in Ti/p-type InP Schottky diode without and with PANI interlayer, respectively. The domination of trap filled space-charge-limited current in Ti/p-type InP Schottky diode with PANI interlayer could be associated with the traps originated from structural defects prevailing in organic PANI interlayer.

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“…W D is defined as follows: where N C is the conduction band state density of GaN. n (V) is the voltage-dependent ideal factor function and it can be defined as follows [33] :…”

Section: Analysis On the Interface States Between Schottky Contact Me...mentioning

confidence: 99%

Effect of annealing on the electrical performance of N-polarity GaN Schottky barrier diodes

Xu,

Deng,

et al. 2024

J. Semicond.

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A nitrogen-polarity (N-polarity) GaN-based high electron mobility transistor (HEMT) shows great potential for high-frequency solid-state power amplifier applications because its two-dimensional electron gas (2DEG) density and mobility are minimally affected by device scaling. However, the Schottky barrier height (SBH) of N-polarity GaN is low. This leads to a large gate leakage in N-polarity GaN-based HEMTs. In this work, we investigate the effect of annealing on the electrical characteristics of N-polarity GaN-based Schottky barrier diodes (SBDs) with Ni/Au electrodes. Our results show that the annealing time and temperature have a large influence on the electrical properties of N-polarity GaN SBDs. Compared to the N-polarity SBD without annealing, the SBH and rectification ratio at ±5 V of the SBD are increased from 0.51 eV and 30 to 0.77 eV and 7700, respectively, and the ideal factor of the SBD is decreased from 1.66 to 1.54 after an optimized annealing process. Our analysis results suggest that the improvement of the electrical properties of SBDs after annealing is mainly due to the reduction of the interface state density between Schottky contact metals and N-polarity GaN and the increase of barrier height for the electron emission from the trap state at low reverse bias.

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Effect of copper phthalocyanine (CuPc) interlayer on the electrical characteristics of Au/n-GaN Schottky rectifier

Cited by 18 publications

References 39 publications

Current–voltage and capacitance–voltage characteristics of Al Schottky contacts to strained Si-on-insulator in the wide temperature range

Current–voltage and capacitance–voltage characteristics of Al Schottky contacts to strained Si-on-insulator in the wide temperature range

Modification of Schottky Barrier Properties of Ti/p-type InP Schottky Diode by Polyaniline (PANI) Organic Interlayer

Effect of annealing on the electrical performance of N-polarity GaN Schottky barrier diodes

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