Current–voltage and capacitance–voltage characteristics of Al Schottky contacts to strained Si-on-insulator in the wide temperature range

Jyothi, I.; Janardhanam, V.; Hong, Hyobong; Choi, Chel‐Jong

doi:10.1016/j.mssp.2015.05.043

Cited by 41 publications

(7 citation statements)

References 46 publications

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“…Current increases in both devices with applied bias. The barrier distribution deformation under applied bias was identified by contacting the abrupt Schottky's ideality coefficient [ 15 ]. The reverse current was comparatively higher in thicker epitaxial layers.…”

Section: Resultsmentioning

confidence: 99%

“…Table 4. The tunneling probability (E 00 ) as calculated from equation [15] for doing concentration of 2 Â 10 16 cm À3 and the electron effective mass as well as the dielectric constant as extracted from the simulation program [34]. E 00 (eV) 0.0252…”

Section: Declarationsmentioning

confidence: 99%

“…In real simple metal-semiconductor Schottky diodes, the extraction of Schottky diodes becomes difficult with an ideality factor (n = 1) [ 14 ]. Because of non-ideal thermionic emissions, generation-recombination and quantum mechanical tunneling are encompassed within real simple metal-semiconductor in the space charge region [ 15 ]. Thereby, the ideal case deviates from the I-V characteristic where a fixed homogeneous SBH and abrupt junction are observed.…”

Section: Introductionmentioning

confidence: 99%

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Schottky barrier inhomogeneities at the interface of different epitaxial layer thicknesses of n-GaAs/Ti/Au/Si: Al0.33Ga0.67As

Al-Ahmadi

2020

Heliyon

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The effects of an epitaxial layer on the rectifying behavior of n -GaAs/Ti/Au/Si:Al 0.33 Ga 0.67 As diodes have been examined through the inhomogeneity model on n + -GaAs substrate with orientation. The electrical properties and conduction mechanism of these materials were understood through theoretical models. The inhomogeneity model was used to electrical behavior of these diodes was explained. The barrier height inhomogeneity model reveals a 13% and 15% barrier height inhomogeneity in N1 and N2 Schottky diodes, respectively. The ideal thermionic emission behavior increases the ideality factors and reduces barrier heights. Within the entire temperature range, the effective Schottky barrier for a thin epitaxial layer was higher. Such results depicted the presence of defects in the thick layer, which decreased the barrier height and ultimately degraded diode performance. The thermionic emission theory along with Gaussian distribution of barrier heights is explained by the temperature dependence of the forward bias current-voltage-temperature (I-V-T) features.

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Section: Resultsmentioning

confidence: 99%

Section: Declarationsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Schottky barrier inhomogeneities at the interface of different epitaxial layer thicknesses of n-GaAs/Ti/Au/Si: Al0.33Ga0.67As

Al-Ahmadi

2020

Heliyon

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“…One conventional method to estimate the SBH is via the measurement of current-voltage and temperature (I-V-T). This conventional method to find out this important term is by injecting each data pair (T 0 , I s ) into the following equation, [1][2][3][4][5]…”

mentioning

confidence: 99%

“…Therefore, there was a temperature-dependent barrier height in many references. [1][2][3][4][5][6][7][8] The barrier height is considerably dependent on the temperature because of the method to use Richardson-Dushman's formula. As one can see in references, the values of j increase with increasing temperature, 9-14 however, as the temperature increases, the barrier height of GaAs/Cr and Pd/n-GaSb starts to decrease.…”

mentioning

confidence: 99%

A Forward Current-Voltage-Temperature Method for Extraction of Intrinsic Schottky Barrier Height

Changshi

2020

ECS J. Solid State Sci. Technol.

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Schottky Barrier Height, SBH, controls the current flow into electronic and photoelectronic devices based on hetero-junctions. The SBH predicted via the conventional method is sensitive to temperature by forward current-voltage-temperature, I-V-T. This poses some problems in applications of a hetero-junction device. Therefore, one looks for a technique to extract intrinsic SBH of each new hetero-junction. This paper established a simple model for determination of the forward I-V-T characteristics, a real thermionic current, Itc, and SBH. This model was introduced by considering quantum statistics and phenomenological. The proposed methodology can couple two independent plots of each hetero-junction current and helps predict the value of current at any measurement condition. The proposed model was successfully validated via over twenty experimental I–V curves. Therefore, applying the least-squares nonlinear fitting to extract the parameters of the proposed model on Itc-T yields the values of the intrinsic SBH. The results of applications on four hetero-junctions prove that the proposed method is credible in this paper.

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On the temperature dependent current transport mechanisms and barrier inhomogeneity in Au/SnO2–PVA/n-Si Schottky barrier diodes

et al. 2017

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Current–voltage and capacitance–voltage characteristics of Al Schottky contacts to strained Si-on-insulator in the wide temperature range

Cited by 41 publications

References 46 publications

Schottky barrier inhomogeneities at the interface of different epitaxial layer thicknesses of n-GaAs/Ti/Au/Si: Al0.33Ga0.67As

Schottky barrier inhomogeneities at the interface of different epitaxial layer thicknesses of n-GaAs/Ti/Au/Si: Al0.33Ga0.67As

A Forward Current-Voltage-Temperature Method for Extraction of Intrinsic Schottky Barrier Height

On the temperature dependent current transport mechanisms and barrier inhomogeneity in Au/SnO2–PVA/n-Si Schottky barrier diodes

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