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Okunev, V. D.; Szymczak, R.; Баран, М.; Szymczak, H.; Gierłowski, P.

doi:10.1103/physrevb.74.014404

Cited by 33 publications

(23 citation statements)

References 36 publications

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“…31,32 Separately, J increases with the increase of temperature in both negative and positive V g ranges. When the temperature is increased, more high-energy holes and electrons are provided by the Si substrate.…”

Section: Resultsmentioning

confidence: 99%

Temperature Effects on Charge Storage and Transfer of Nanocrystalline CdSe Embedded Zr-Doped HfO₂MOS Memory Device

Zhang

Kuo

2016

ECS J. Solid State Sci. Technol.

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The influence of temperature on the charge storage and transfer characteristics of the nanocrystalline CdSe embedded Zr-doped HfO 2 high-k dielectric on the p-type Si wafer has been studied. With the increase of temperature, the hole-trapping capacity is increased but the electron-trapping follows the opposite trend, which results in a small reduction of the memory window. From the frequency dispersion measurement result, at high temperatures, holes are loosely trapped at the nanocrystal/high-k interface and electrons are mainly trapped in the bulk nanocrystal. The high temperature induces a larger leakage current because it enhances the charge supply and transfer in the high-k stack. At the low applied voltage, the charge transfer follows the Schottky emission mechanism. In the high, positive gate voltage region, charges are transferred following the Poole-Frenkel mechanism at the low temperature and the Fowler-Nordheim mechanism at the high temperature. The temperature has little effect on the sample's leakage current-gate voltage hysteresis due to the large charge trapping capability. In summary, temperature is an important factor in the operation of the nanocrystals embedded high-k memory device because it affects the charge storage and transfer mechanisms. The quantum dots or nanocrystals embedded gate dielectric stack has been proposed as a possible candidate to replace the polycrystalline Si based floating-gate dielectric structure in nonvolatile memories (NVM's) for the improved reliability.1 This kind of structure retains charges at discrete nanodot sites to avoid the complete loss of trapped charges via a single leakage path in the tunnel oxide layer. 1,2Nanocrystalline Si, ITO, ZnO, MoO x , etc., have been embedded in a SO 2 or high dielectric constant (high-k) dielectric as the charge storage media.2-5 CdSe is a n-type semiconductor with a large work function of 4.8-5.0 eV. 6 The metal-oxide-semiconductor (MOS) capacitor with the nanocrystalline CdSe (nc-CdSe) embedded in SiO 2 has shown the memory function.7 However, SiO 2 is not suitable for future nano sized MOS devices because of the unacceptable large leakage current, which cannot reliably retain trapped charges. 8,9 In order to solve this problem, the SiO 2 layer can be replaced with a physically thicker high-k material, such as HfO 2 or Zr-doped HfO 2 (ZrHfO). [10][11][12] The ZrHfO film has many advantageous dielectric properties over the undoped HfO 2 film, e.g., a higher crystallization temperature, a lower interface state density (D it ), and a larger effective k value.13,14 The nc-CdSe embedded ZrHfO high-k dielectric can store a large number of charges. 15Currently, most studies on the nanocrystals embedded high-k NVMs have been focused on the room temperature performance. Very few publications discuss the temperature effect on this kind of device. 16 However, the temperature of a high-density IC chip during the operation can be much higher than the room temperature.17 Therefore, it is necessary to understand the influence of temperature...

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Section: Resultsmentioning

confidence: 99%

Temperature Effects on Charge Storage and Transfer of Nanocrystalline CdSe Embedded Zr-Doped HfO₂MOS Memory Device

Zhang

Kuo

2016

ECS J. Solid State Sci. Technol.

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“…Наиболее сложным оказывается учет последствий об-разования примесных центров и возникновения новых фаз [2][3][4][5][6]. Если в состав входят два оксида, то, при малых концентрациях одного из них, он является источником примесных центров в основной фазе.…”

Section: Introductionunclassified

"Отрицательная" щель в спектре локализованных состояний (In-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-)-=SUB=-0.9-=/SUB=-(SrO)-=SUB=-0.1-=/SUB=-

Okunev¹,

Дьяченко²,

Burkhovetskii³

2017

Физика Твердого Тела

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Исследованы спектры отражения R(homega), пропускания t(homega), поглощения alpha(homega) и преломления n(homega) поликристаллических образцов In2O3-SrO с низкой оптической прозрачностью, содержащих кристаллиты In2O3 и In2SrO4 с прослойками In4SrO6+delta. В области малых homega коэффициент отражения уменьшается с ростом сопротивления образцов при их насыщении кислородом. С помощью соотношений классической электродинамики рассчитаны спектральные зависимости n(homega) и alpha(homega). Результаты сопоставлены с данными, полученными на основе спектров t(homega). Расчетные спектры поглощения интерпретируются в рамках модели, предполагающей перекрытие хвостов плотности состояний валентной зоны и зоны проводимости с образованием "отрицательной" щели в плотности состояний, Egn=--0.5pt- 0.12- --0.5pt- 0.47 eV, при сильном разупорядочении структуры образцов. Показано, что, наряду с высокой концентрацией дефектов, важнейшую роль в размытии края поглощения и сдвиге его в область малых энергий играет зона глубоких акцепторных состояний стронция в основной матричной фазе In2O3. Определена прямая щель Egd=1.3 eV, относящаяся к фазе In2SrO4. Обсуждается зонная энергетическая диаграмма и роль туннелирования, снижающего пороговую энергию для межзонных оптических переходов. DOI: 10.21883/FTT.2017.08.44762.405

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“…In the volume of deposited layers, the formation of clusters, which possess an intermediate order [1] and significantly influence the structure and properties of samples, is determined by the substrate type and temperature and stimulated by local internal stresses [5][6][7]. The clusterization is more pronounced in systems susceptible to phase separation [8,9].…”

mentioning

confidence: 97%

“…For determining the concentration of clusters in LSMO, a more acceptable approach is based on magnetic methods [13]. In this study, we have also compared the technologies of pulsed laser sput tering [2,5,[10][11][12] and magnetron sputtering of mul ticomponent metal oxide targets.…”

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confidence: 99%

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Effect of flux clusterization on the thickness of films deposited by magnetron and pulsed laser sputtering of metal oxides

et al. 2012

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231The deposition of films of multicomponent chem ical compounds is usually accompanied by clusteriza tion, whereby the parameters of clusters are clearly related to the main structural types of the deposited material [1][2][3][4]. In the volume of deposited layers, the formation of clusters, which possess an intermediate order [1] and significantly influence the structure and properties of samples, is determined by the substrate type and temperature and stimulated by local internal stresses [5][6][7]. The clusterization is more pronounced in systems susceptible to phase separation [8,9].However, the formation of clusters during the dep osition of films from the gas phase is frequently observed before the onset of film growth. This is espe cially clearly manifested when the deposition process is based on the sputtering of targets and the formation of clusters takes place in the flow of sputtered material moving from the target to substrate. In this case, the clusterization is clearly revealed in deposited films with amorphous structure deposited onto cold glass substrates, where the clusters appear as "frozen" local atomic configurations incorporated into the amor phous matrix. These configurations are nucleated in the flow as a result of collisions and chemical interac tions of the sputtered components with each other and with atoms (ions) of a working gas [10,11]. Simulta neously, these collisions in low pressure gaseous media lead to a decrease in the ion energy and account for losses of the material moving from the target to substrate, thus affecting the deposited film thickness. Therefore, the gas phase collisions influence both the thickness of deposited layers and cluster formation, thus determining their possible interrelation.We have studied the relation between clusterization in the flux of a substance and the thickness of depos ited films obtained by the sputtering of La 0.7 Sr 0.3 MnO 3 (LSMO) and YBa 2 Cu 3 O 7 -δ (YBCO) targets. Both these metal oxides are known to be high susceptible to cluster formation [2, 5, 6, 10]. In amorphous YBCO, clusters are conveniently revealed by optical tech niques [10][11][12]. For determining the concentration of clusters in LSMO, a more acceptable approach is based on magnetic methods [13]. In this study, we have also compared the technologies of pulsed laser sput tering [2, 5, 10-12] and magnetron sputtering of mul ticomponent metal oxide targets.The magnetron sputtering of an LSMO target with a diameter of D = 4 cm was performed at a current of 140 mA and an interelectrode voltage of 350 V in a mixture of argon (84 at. %) and oxygen (16 at. %)at a total working gas pressure of 6 × 10 -3 Torr. A distance from the target to the edge of a glass substrate (oriented perpendicular to the target) was 0.5 cm (Fig. 1a). Dur ing the pulsed laser sputtering of an YBCO target, the film was deposited onto a glass substrate oriented along the direction of predominant plasma expansion in the laser plume (Fig. 1b) [14]. The YBCO target was sputtered in oxygen at a pressure of 2 ×...

show abstract

Effect of Coulomb blockade on the low- and high-temperature resistance ofLa1−xMxMnO3
V. D. Okunev
¹
,
R. Szymczak
²
,
М. Баран
³

et al.

Cited by 33 publications

References 36 publications

Temperature Effects on Charge Storage and Transfer of Nanocrystalline CdSe Embedded Zr-Doped HfO₂MOS Memory Device

Temperature Effects on Charge Storage and Transfer of Nanocrystalline CdSe Embedded Zr-Doped HfO₂MOS Memory Device

"Отрицательная" щель в спектре локализованных состояний (In-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-)-=SUB=-0.9-=/SUB=-(SrO)-=SUB=-0.1-=/SUB=-

Effect of flux clusterization on the thickness of films deposited by magnetron and pulsed laser sputtering of metal oxides

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Effect of Coulomb blockade on the low- and high-temperature resistance ofLa1−xMxMnO3V. D. Okunev1, R. Szymczak2, М. Баран3 et al.

Cited by 33 publications

References 36 publications

Temperature Effects on Charge Storage and Transfer of Nanocrystalline CdSe Embedded Zr-Doped HfO2MOS Memory Device

Temperature Effects on Charge Storage and Transfer of Nanocrystalline CdSe Embedded Zr-Doped HfO2MOS Memory Device

"Отрицательная" щель в спектре локализованных состояний (In-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-)-=SUB=-0.9-=/SUB=-(SrO)-=SUB=-0.1-=/SUB=-

Effect of flux clusterization on the thickness of films deposited by magnetron and pulsed laser sputtering of metal oxides

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Product

Resources

About

Effect of Coulomb blockade on the low- and high-temperature resistance ofLa1−xMxMnO3
V. D. Okunev
¹
,
R. Szymczak
²
,
М. Баран
³

et al.

Temperature Effects on Charge Storage and Transfer of Nanocrystalline CdSe Embedded Zr-Doped HfO₂MOS Memory Device

Temperature Effects on Charge Storage and Transfer of Nanocrystalline CdSe Embedded Zr-Doped HfO₂MOS Memory Device