Effect of crystal orientation and doping on the activation energy for GaAs oxide growth by liquid phase method

Wang, Hwei Heng; Chou, Dei-Wei; Wu, Jau Yi; Wang, Yeong-Her; Houng, Mau Phon

doi:10.1063/1.372228

Cited by 19 publications

(2 citation statements)

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“…Oxygen is clearly found from the surface to the inner state of the (In)GaAs layer. The oxidation rate of p + -GaAs is less than that of n-GaAs, which is consistent with the results of [10]. The XPS depth profiles of the LPO-grown oxide for In 0.49 Ga 0.51 P are shown in figure 3(c).…”

Section: Resultssupporting

confidence: 88%

“…Over the past few years, an alternative technique named liquid phase chemical-enhanced oxidation (LPCEO) on GaAs [8][9][10][11][12], AlGaAs [13,14], InGaP [15], InGaAs [16], InAlAs [16] and so on has been demonstrated. This is a stable, reliable, simple and low-temperature (30-70 • C) technique in growing uniform and smooth native oxide films.…”

Section: Introductionmentioning

confidence: 99%

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Liquid phase oxidation for InGaP/GaAs HBT passivation

Sze

Lee

Huang

et al. 2006

Semicond. Sci. Technol.

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Native oxide films grown near room temperature by liquid phase oxidation (LPO) on p + -GaAs, n-InGaAs and n-InGaP are investigated. Their applications to heterojunction bipolar transistors (HBTs) are also demonstrated and characterized. With the LPO as surface passivation, the dc current gain β of the HBT devices increases sevenfold in low collector current regimes, and it also shows wider collector regimes from 8.3 × 10 −11 A to 0.1 A. In addition, a larger breakdown voltage and lower surface recombination current can be obtained. This provides the possibility of promising implementations in low-power electronics and communication applications. Comparisons between devices with LPO passivation and those with sulfur treatment on the InGaP/GaAs HBTs are also discussed.

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Section: Resultssupporting

confidence: 88%

Section: Introductionmentioning

confidence: 99%

Liquid phase oxidation for InGaP/GaAs HBT passivation

Sze

Lee

Huang

et al. 2006

Semicond. Sci. Technol.

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Properties of the GaAs oxide layer grown by the liquid-phase chemical-enhanced technique on the S-passivated GaAs surface

Chou

Lou

Wang

et al. 2002

Journal of Elec Materi

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INTRODUCTIONNearly all of the planar semiconductor electronic devices are adversely affected by the electrical properties of the semiconductor surface and interface. Silicon, being the only exception, owes its unrivalled success to the ability of its oxide to passivate and impart excellent electrical properties to its surface. With niche areas in optoelectronics, and very high speed and low power data processing, III-V compound semiconductors are plagued with unacceptably large interface traps and a lack of a suitable passivation method to impart acceptable qualities to the interface. 1 Passivation of the GaAs surface has been shown to improve the electrical characteristics of GaAs devices. One example is improvement in the electrical characteristics of GaAs metal-insulatorsemiconductor diodes. 2 For this purpose, the GaAs surface is exposed to agents involving S (i.e., S passivation), such as Na 2 S and (NH 4 ) 2 S, and P 2 S 5 / (NH 4 ) 2 S has been used as the S passivation source. Elemental S, selenium, and tellurium have also been used to passivate the GaAs surface. 2,3 The purpose of this study is to investigate the effect of S passivation of GaAs on improving electrical characteristics of metal-oxide-semiconductor (MOS) structures with the oxide layers prepared by the liq-uid-phase chemical-enhanced oxidation (LPCEO) technique. 4,5 In this paper, the electrical properties of oxide layers on the (NH 4 ) 2 S x -passivated GaAs surface were realized by using current-voltage measurements. The oxide layer thickness and refractive index were measured by ellipsometry. In addition, the chemical composition of oxide layers was analyzed by secondary ion mass spectroscopy (SIMS). According to the results of SIMS, a model is proposed to illustrate the chemical composition of the oxide layer on the S-passivated GaAs surface and to express improvement of the device parameter. The effect of different surface treatments on the oxidation kinetics is characterized by analyzing their activation energies (E a ) using Arrhenius plots. EXPERIMENTALSamples of GaAs wafers were first cleaned by organic solvents (2-propanol, acetone, and methanol) and etched in H 2 SO 4 :H 2 O 2 :H 2 O (4:1:1). After rinsing with deionized (DI) water, some samples were passivated with (NH 4 ) 2 S x for 0.5-1 h. To investigate the effects of pretreatments, we further employed other samples treated by NH 4 OH or HCl in 10-20% concentration, respectively. Then the as-grown specimens were rinsed with DI water and dried with nitrogen. After this step, the wafers were immediately transferred into an oxidation system under constant temperature. The experimental apparatus and processes of the LPCEO technique can be found in Ref. 4.The properties of GaAs oxide layers prepared by liquid-phase chemical-enhanced oxidation of the (NH 4 ) 2 S x -passivated GaAs surface are investigated. The initial oxidation rate is suppressed and the refractive indices of oxide layers are lower after S passivation. In accordance with the depth profiles measured by secondary ion...

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