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We present the first demonstration of a III-V MOSFET heterointegrated on a large diameter Si substrate and fabricated with a VLSI compatible process flow using a high-k/metal gate, self-aligned implants and refractory Au free ohmic metal. Additionally, TXRF data shows that with the correct protocols III-V and Si devices can be processed side by side in the same Si fabrication line The L g = 500 nm device has a excellent drive current of ~450 µA/µm and intrinsic transconductance of ~1000 µS/µm indicating that III-V VLSI integration is a serious contender for insertion at or beyond the 11 nm technology generation.

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