Effect of Cu-In-Ga Target Composition on Hybrid-Sputtered Cu(In,Ga)Se<sub>2</sub>Solar Cells

Santos, Pedro; Brito, Daniel; Anacleto, Pedro; Fonseca, José J.; Sousa, Diana de Brito; Tavares, C. J.; Alves, Marina; Pérez-Rodríguez, Ana; Sadewasser, Sascha

doi:10.1109/jphotov.2021.3086452

Cited by 5 publications

(5 citation statements)

References 34 publications

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“…Mo/CIGSe stacks were deposited on a soda-lime glass (SLG) substrate using a magnetron sputtering system called STAR (SpuTtering for Advanced Research) [10]. The CIGSe deposition process followed the 2-step process described in a previous study [11]. The SLG/Mo/CIGSe stacks were coated with AZP-4110 positive photoresist, and stripes with widths ranging from 200 -1000 µm were patterned using a direct-write laser system.…”

Section: Methodsmentioning

confidence: 99%

Fabrication of semi-transparent Cu(In,Ga)Se2 solar cells aided by Bromine etching

et al. 2023

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Section: Methodsmentioning

confidence: 99%

Fabrication of semi-transparent Cu(In,Ga)Se2 solar cells aided by Bromine etching

et al. 2023

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“…Visual inspection suggests that the grain size is larger for the higher sputtering powers even before and after selenization. The surface morphology of each CIGSe absorber is primarily dominated by the underlying particulate structure, even if this microfilm is still visible beneath the covering layer [10]. Before the CIG film is selenized, the film images of left-Figure 2(a) have many lumpy structures, and its particulate size gradually increases as the sputtering power gradually increases (20-40 W).…”

Section: Experiments and Measurementsmentioning

confidence: 99%

The Overall-Efficiency Improvement of Flexible CIGSe Solar Cells by Two-Segment Process

Li,

Ho,

et al. 2023

Preprint

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In this paper, the overall performance of Cu-(In,Ga)-Se2 (CIGSe) solar cells was improved in the ultraviolet (UV)–visible wavelength region by two-segment process. In which, adjusting DC sputtering powers (20–40 W) for absorbers (segment I), and metal-alloy compositions (CdS, ZnO/CdS, ZnMgO/CdS and ZnMgO) for buffers (segment II) were explored and characterized. Upon choosing the optimal-30-W CIGSe-absorber (with 0.95-CGI ratio) sputtered by the segment-I process, the Cu-rich film can distinctly boost grain growth, thus reducing the trap state density. After segment-II process as the toxic-CdS alternative, the optimal Zn0.9Mg0.1O-alloy buffer can reach the best conversion efficiency (η = 8.70%) was attained for the environmental protection. Meanwhile, and the overall internal/external quantum efficiencies (IQE/EQE) were improved by 13.15%, respectively for the 2.48–3.62-eV bandgap (short wavelength) range. The developed photovoltaic (PV) module (with 9 optimum-CIGSe cells) exhibits acceptable stability with a variance within ±5% over the 60-day experiment. This discovery in PV-device research contributes to a new scientific understanding of renewable energy. Furthermore, this study undeniably enhances the progress of practical applications for PV-modules in alignment with sustainable development goals. It also actively supports the development of eco-friendly communities.

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“…The temperature of the Se cell reservoir was 300 • C, and the cracker temperature was approximately 600 • C. Further information is provided in Refs. [15,16]. The Se valve opening was set to 9.0 mm and a magnetic actuator opens the valve, thus allowing the Se to enter into the chamber.…”

Section: Growth Procedures Of Sb 2 Se 3 Thin Filmsmentioning

confidence: 99%

Antimony Selenide Solar Cells Fabricated by Hybrid Reactive Magnetron Sputtering

et al. 2023

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The fabrication of Sb2Se3 thin-film solar cells deposited by a pulsed hybrid reactive magnetron sputtering (PHRMS) was proposed and examined for different growth conditions. The influence of growth temperature and Se pulse period were studied in terms of morphology, crystal structure, and composition. The Sb2Se3 growth showed to be dependent on the growth temperature, with a larger crystal size for growth at 270 °C. By controlling the Se pulse period, the crystal structure and crystal size could be modified as a function of the supplied Se amount. The solar cell performance for Sb2Se3 absorbers deposited at various temperatures, Se pulse periods and thicknesses were assessed through current-voltage characteristics. A power conversion efficiency (PCE) of 3.7% was achieved for a Sb2Se3 solar cell with 900 nm thickness, Sb2Se3 deposited at 270 °C and Se pulses with 0.1 s duration and period of 0.5 s. Finally, annealing the complete solar cell at 100 °C led to a further improvement of the Voc, leading to a PCE of 3.8%, slightly higher than the best reported Sb2Se3 solar cell prepared by sputtering without post-selenization.

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Effect of Cu-In-Ga Target Composition on Hybrid-Sputtered Cu(In,Ga)Se₂Solar Cells

Cited by 5 publications

References 34 publications

Fabrication of semi-transparent Cu(In,Ga)Se2 solar cells aided by Bromine etching

Fabrication of semi-transparent Cu(In,Ga)Se2 solar cells aided by Bromine etching

The Overall-Efficiency Improvement of Flexible CIGSe Solar Cells by Two-Segment Process

Antimony Selenide Solar Cells Fabricated by Hybrid Reactive Magnetron Sputtering

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Effect of Cu-In-Ga Target Composition on Hybrid-Sputtered Cu(In,Ga)Se2Solar Cells

Cited by 5 publications

References 34 publications

Fabrication of semi-transparent Cu(In,Ga)Se2 solar cells aided by Bromine etching

Fabrication of semi-transparent Cu(In,Ga)Se2 solar cells aided by Bromine etching

The Overall-Efficiency Improvement of Flexible CIGSe Solar Cells by Two-Segment Process

Antimony Selenide Solar Cells Fabricated by Hybrid Reactive Magnetron Sputtering

Contact Info

Product

Resources

About

Effect of Cu-In-Ga Target Composition on Hybrid-Sputtered Cu(In,Ga)Se₂Solar Cells