Effect of Current Density on the Series Resistance of SDR (n+np+) Silicon IMPATT Diode in the X Band

Effect of punch through on the microwave series resistance of n+np+Si IMPATT diodes around the X band

“…Following the above approach, that is free from simplifying assumptions under small signal condition, the real {R(x, ω)} and imaginary parts {X(x, ω)} of the diode impedance (Z = R + jX) can be calculated from the following relations [7,8,10,11]:…”

“…In 1983, Adlerstein et al [2] and in 1993, Mitra et al [6] calculated analytically the values of R s for DDR and SDR IMPATTs, respectively. In 1996 [7] and in 1998 [8], the author calculated the values of R s through a small signal computer simulation considering unequal ionization rates and drift velocities of charge carriers. Also, in the present analysis following the approach of Gummel and Blue [9], the authors have been able to investigate the dependence of series resistance with the degree of punch through of the field profile in the depletion layer.…”

“…Also, in the present analysis following the approach of Gummel and Blue [9], the authors have been able to investigate the dependence of series resistance with the degree of punch through of the field profile in the depletion layer. In the double iterative computer simulation technique, Poisson and continuity equations of p-n junction diodes have been solved considering the effect of mobile space charge and satisfying the appropriate boundary conditions [7,8,[10][11][12]. Experimental values of ionization rates [13] and fielddependent drift velocities [14] of the charge carriers have been used.…”

Optically induced series resistance and microwave properties of n ++np++ X band Si IMPATT diode

“…The static properties of the diode have been obtained following the method of Datta et al [13]. With the static parameters as input, the spatial variation of the diode negative resistivity and the reactivity in the depletion layer have been obtained solving the device equations, described elsewhere [1,11,14,15,16]. The series resistance has been calculated following the relation of Adlerstein et al [17].…”