Effect of deep traps on sheet charge inAlGaN/GaN high electron mobility transistors

Klein, P. B.; Binari, S.C.; Ikossi, K.; Wickenden, A. E.; Koleske, D. D.; Henry, R. L.

doi:10.1049/el:20011040

Cited by 13 publications

(9 citation statements)

References 8 publications

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“…It is interesting that the 2DEG sheet charge, n s , for this set of devices exhibited [43] the same dependence (but inverted) on growth pressure as the total trap concentration (i.e. Trap1 + Trap2).…”

Section: Photoionization Measurementsmentioning

confidence: 72%

Photoionization spectroscopy of deep defects responsible for current collapse in nitride-based field effect transistors

Klein

Binari

2003

J. Phys.: Condens. Matter

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This review is concerned with the characterization and identification of the deep centres that cause current collapse in nitride-based field effect transistors. Photoionization spectroscopy is an optical technique that has been developed to probe the characteristics of these defects. Measured spectral dependences provide information on trap depth, lattice coupling and on the location of the defects in the device structure. The spectrum of an individual trap may also be regarded as a 'fingerprint' of the defect, allowing the trap to be followed in response to the variation of external parameters. The basis for these measurements is derived through a modelling procedure that accounts quantitatively for the light-induced drain current increase in the collapsed device. Applying the model to fit the measured variation of drain current increase with light illumination provides an estimate of the concentrations and photoionization cross-sections of the deep defects. The results of photoionization studies of GaN metal-semiconductor field effect transistors and AlGaN/GaN high electron mobility transistors (HEMTs) grown by metal-organic chemical vapour deposition (MOCVD) are presented and the conclusions regarding the nature of the deep traps responsible are discussed. Finally, recent photoionization studies of current collapse induced by short-term (several hours) bias stress in AlGaN/GaN HEMTs are described and analysed for devices grown by both MOCVD and molecular beam epitaxy. Contents

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Section: Photoionization Measurementsmentioning

confidence: 72%

Photoionization spectroscopy of deep defects responsible for current collapse in nitride-based field effect transistors

Klein

Binari

2003

J. Phys.: Condens. Matter

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“…that the reduction of 2DEG carrier density is attributed to the trapping effect caused by carbon-related defect. 11,17 One should also note that the silicon and oxygen concentrations in the investigated samples are below the carbon concentrations, except in the sample T5 where the carbon concentration is likely lowered down to a level close to those of silicon and oxygen as the growth temperature is elevated above 1080 C ( Fig. 1(b)).…”

Section: -2mentioning

confidence: 93%

Impact of residual carbon on two-dimensional electron gas properties in AlxGa1−xN/GaN heterostructure

Chen

Forsberg

Janzén

2013

Applied Physics Letters

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High tuneability of residual carbon doping is developed in a hot-wall metalorganic chemical vapor deposition reactor. Two orders of temperature-tuned carbon concentration, from ∼2 × 1018 cm−3 down to ∼1 × 1016 cm−3, can be effectively controlled in the growth of the GaN buffer layer. Excellent uniformity of two-dimensional electron gas (2DEG) properties in AlxGa1−xN/AlN/GaN heterostructure with very high average carrier density and mobility, 1.1 × 1013 cm−2 and 2035 cm2/V·s, respectively, over 3" semi-insulating SiC substrate is realized with the temperature-tuned carbon doping scheme. Reduction of carbon concentration is evidenced as a key to achieve high 2DEG carrier density and mobility

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“…The difference in light and dark measured resistivity has been associated with trapping states that are detrimental to device performance for AlGaN/GaN HEMTs. The discussion of this phenomenon is beyond the scope of the current work, but is the subject of ongoing investigation [19].…”

Section: Resistivity Analysismentioning

confidence: 96%

Resistivity control in unintentionally doped GaN films grown by MOCVD

Wickenden

Koleske

Henry

et al. 2004

Journal of Crystal Growth

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105

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Effect of deep traps on sheet charge inAlGaN/GaN high electron mobility transistors

Cited by 13 publications

References 8 publications

Photoionization spectroscopy of deep defects responsible for current collapse in nitride-based field effect transistors

Photoionization spectroscopy of deep defects responsible for current collapse in nitride-based field effect transistors

Impact of residual carbon on two-dimensional electron gas properties in AlxGa1−xN/GaN heterostructure

Resistivity control in unintentionally doped GaN films grown by MOCVD

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