Effect of defect creation and migration on hump characteristics of a-InGaZnO thin film transistors under long-term drain bias stress with light illumination

Cho, Yong‐Jung; Kim, Woo‐Sic; Lee, Yeol‐Hyeong; Park, Jeong Ki; Kim, Geon Tae; Kim, Ohyun

doi:10.1016/j.sse.2018.03.009

Cited by 19 publications

(5 citation statements)

References 26 publications

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“…We found that in all NIBS, when the negative bias time reaches 1000s, the transfer curve will have a hump phenomenon. The hump phenomenon is mainly induced by creation of donorlike states in the channel of TFTs [40] and by trapping of positive charges on the back-channel interface or channel edge [41]. The reason for the occurrence of hump under NIBS in our devices is mainly due to creation of donor-like states in the channel of TFTs because all device have the similar following process except of the UV irradiation treatment.…”

Section: Resultsmentioning

confidence: 84%

Improvement in Bias Stability of IGZO TFT With Etching Stop Structure by UV Irradiation Treatment of Active Layer Island

Pan

Yang

Chen

et al. 2020

IEEE J. Electron Devices Soc.

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In this paper, the effect of ultraviolet (UV) irradiation treatment of active layer IGZO on the bias stability of amorphous IGZO thin film transistor with etch stop (ES) structure is studied. Along with the increase in UV irradiation time, the surface of the IGZO film becomes smoother. An appropriate UV irradiation treatment cannot only improve the bias stress stability but also suppress the lump behavior generated by light illumination. The devices with irradiation time of 1 min exhibits an excellent properties with the field effect mobility of 15.07 cm 2 /V•s, subthreshold swing of 0.2 V/dec, and all bias stress less than 0.2 V including NIBS and PIBS. However, a relative long UV treatment would result in deteriorating the bias stability of devices. The fact implies that the reasonable UV irradiation treatment on the active layer island before depositing the ES layer is advantageous for improving the stability of the a-IGZO TFT device. INDEX TERMS a-IGZO thin film transistor, UV irradiation, stability.

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Section: Resultsmentioning

confidence: 84%

Improvement in Bias Stability of IGZO TFT With Etching Stop Structure by UV Irradiation Treatment of Active Layer Island

Pan

Yang

Chen

et al. 2020

IEEE J. Electron Devices Soc.

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“…Figure shows that the subthreshold swing (SS) degraded with increasing co-sputtering power. One of the probable causes of the deterioration of SS, which degraded the optoelectronic characteristics, is a defect in the channel layer. − The optoelectronic performance decreased with increasing SS value. The SS and optoelectronic characteristics in the dark and under red-light illumination at 1 mW/mm 2 intensity are summarized in Table .…”

Section: Resultsmentioning

confidence: 99%

Polyimide-Doped Indium–Gallium–Zinc Oxide-Based Transparent and Flexible Phototransistor for Visible Light Detection

Kim

Chung

et al. 2022

ACS Appl. Mater. Interfaces

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We report a transparent and flexible polyimide (PI)doped single-layer (PSL) phototransistor for the detection of visible light. The PSL was deposited on a SiO 2 gate insulator by a co-sputtering process using amorphous indium−gallium−zinc oxide (IGZO) and PI targets simultaneously. The PSL acted as both a channel layer and a visible-light absorption layer. PI is one of the few flexible organic materials that can be fabricated into sputtering targets. Compared with the IGZO phototransistor without PI doping, the PSL phototransistor exhibited improved optoelectronic characteristics under illumination with 635 nm red light of 1 mW/mm 2 intensity; the obtained photoresponsivity ranged from 15.00 to 575.00 A/W, the photosensitivity from 1.38 × 10 1 to 9.86 × 10 6 , and the specific detectivity from 1.35 × 10 7 to 5.83 × 10 11 Jones. These improvements are attributed to subgap states induced by the PI doping, which formed decomposed organic molecules, oxygen vacancies, and metal hydroxides. Furthermore, a flexible PSL phototransistor was fabricated and showed stable optoelectronic characteristics even after 10,000 bending tests.

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“…So, many studies analyze this hump phenomenon. [22][23][24][25][26][27][28] In general, the hump phenomenon occurs because the parasitic channels are formed from the edges of relatively thin channels due to stress. [25][26][27] However, the main study on the humps after stress is applied, not generated in the original state.…”

Section: Introductionmentioning

confidence: 99%

Mechanism of Non-Ideal Transfer Characteristic at Low Drain Voltage in Metal-Capped Amorphous Oxide Thin Film Transistor

Lee

2022

IEEE J. Electron Devices Soc.

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Issues of amorphous oxide semiconductors (AOSs) thin-film transistors (TFTs) mainly focus on improving electrical performance and stability. Currently, the hump, the abnormal transfer characteristic, is also an essential factor of AOSs TFT. The hump phenomenon was observed for AOS-TFTs with a metal capping (MC) layer under various measurement conditions. The mobility in the MC TFT was improved from 14.8 cm 2 /Vs to 19.2 cm 2 /Vs compared to that of the conventional TFTs. The improved electrical characteristics in the MC structure are representative of the carrier injection effect and the change of the current path. This reason reveals that the MC structure has a hump phenomenon under the low drain to source voltage (VDS). The hump characteristic does not significantly affect the overall MC TFT characteristics (transfer characteristic, improved electrical characteristics through MC structure, etc.). In addition, it was confirmed that it exhibits very stable hump characteristics through repeated measurements and uniformity. It was found that two current paths are formed mainly due to carrier injection from the metal capping layer in the hump phenomenon observed at low VDS. These divided current paths can lead to two on-currents (Ion) in the transfer curve. Many studies have recently been conducted to fabricate semiconductor devices with multi-values such as 0, 1, and 2. This divided current path could propose a simple method to achieve multi-values with an easy process.

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Effect of defect creation and migration on hump characteristics of a-InGaZnO thin film transistors under long-term drain bias stress with light illumination

Cited by 19 publications

References 26 publications

Improvement in Bias Stability of IGZO TFT With Etching Stop Structure by UV Irradiation Treatment of Active Layer Island

Improvement in Bias Stability of IGZO TFT With Etching Stop Structure by UV Irradiation Treatment of Active Layer Island

Polyimide-Doped Indium–Gallium–Zinc Oxide-Based Transparent and Flexible Phototransistor for Visible Light Detection

Mechanism of Non-Ideal Transfer Characteristic at Low Drain Voltage in Metal-Capped Amorphous Oxide Thin Film Transistor

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