Effect of Delta Doping on the RF Performance of Nano-scale Dual Material MOSFET

Mohanty, Soumya S.; Mishra, Sandip K.; Singh, Manjeet; Nanda, Pradipta Kumar; Mishra, Guru Prasad

doi:10.1016/j.procs.2015.07.485

Cited by 9 publications

(1 citation statement)

References 17 publications

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“…The 2015 marked a time where delta doping was used in Mohanty, S.S.'s paper and four different variations of delta doped transistors [10]. All of them showing promising high frequency cut-offs.…”

Section: Previous Research Work On Dopingmentioning

confidence: 99%

Parametric Variations of Transistor Doping Profiles for Ultra Low Power Applications

Domi¹,

Fouad²,

Ullah³

2018

IJVSP

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The VLSI industry is facing the significant parasitic effects that creates a serious problem for further development in the nanoscale domain. However, instead of replacing the traditional MOSFET design, it would be more advantageous to apply different doping profiles for ultra-low power applications. With a comprehensive review of Gaussian doping, Uniform doping, and Delta doping profiles and analysis of the FET technology characteristics that use these doping profiles, a comparison can be made among them for integrated circuit design engineers. These doping profiles are compared based on how well they perform between non-ideal and ideal environments. Also, both digital and analog performance parameters are measured to ensure the uniqueness of each doping profile. After getting a list of benefits from each doping profile that is presented in this paper, it is concluded to determine which doping profile works best against a host of parasitic effects. Finally, this paper also conclude that what type of possible applications do these doping profiles.

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Section: Previous Research Work On Dopingmentioning

confidence: 99%