Effect of deposition temperature and surface reactions in atomic layer deposition of silicon oxide using Bis(diethylamino)silane and ozone

Mechanistic Mapping of Ozone-Dosed Al2O3 Atomic Layer Deposition Half-Cycles

“…8 Roh et al studied the effect of deposition temperature and surface reaction on the ALD process for generating silicon oxide films assisted by bis(diethylamino)silane and O 3 . 9 with less vacancy levels compared with water-assisted films. 10 Despite these efforts toward understanding O 3 -dosed halfcycles, limited mechanistic information is available and further explorations are necessary.…”

“…They reported that the H 2 O-dosed half-cycle generated higher concentrations of oxygen vacancies and hydrogen impurities than those generated by the O 3 -dosed half-cycle. Furthermore, these oxygen vacancies and hydrogen impurities were revealed to create midgap defect levels with unwanted conduction pathways. , To avoid these issues, many researchers have attempted to replace H 2 O by identifying alternative oxygen resources, with a particular focus on O 3 and hydrogen peroxide (H 2 O 2 ). − Cheng et al highlighted that the introduction of an O 3 -dosed half-cycle improved film coverage as compared to the H 2 O-dosed half-cycle . Fan et al reported that the film growth rate of a trimethylaluminum (TMA)/H 2 O-dosed Al 2 O 3 ALD process decreased at low temperatures, whereas reasonable film growth rates were observed for the TMA/H 2 O 2 -dosed ALD process, even at room temperature .…”

“…Fan et al reported that the film growth rate of a trimethylaluminum (TMA)/H 2 O-dosed Al 2 O 3 ALD process decreased at low temperatures, whereas reasonable film growth rates were observed for the TMA/H 2 O 2 -dosed ALD process, even at room temperature . Roh et al studied the effect of deposition temperature and surface reaction on the ALD process for generating silicon oxide films assisted by bis­(diethylamino)­silane and O 3 . Seweryn et al proved that ozone-dosed ALD would the formation of homogeneous high- k metal oxide films with less vacancy levels compared with water-assisted films .…”

Atomic layer deposition of silicon oxide films using bis(dimethylaminomethylsilyl)trimethylsilylamine and ozone: first-principles and experimental study

“…15 Therefore, ALD processes using diisopropylaminosilane (DIPAS, SiH 3 (N i Pr 2 )), bis(diethylamino)silane (BDEAS, SiH 2 (NEt 2 ) 2 ), or tris(dimethylamino)silane (tris-DMAS, SiH(NMe 2 ) 3 ) were adopted in semiconductor manufacturing. However, the maximum ALD temperature was limited to 250, 350, and 400 °C for DIPAS, 16 BDEAS, 13 and tris-DMAS, 17 respectively. Also, the growth rate decreased from 2.5 Å per cycle of DIPAS to 1.0 Å per cycle of BDEAS and 0.55 Å per cycle of tris-DMAS, respectively.…”

“…A variety of aminosilane compounds with different dialkylamido ligands have also been extensively studied as chlorinefree silicon precursors. They showed low-temperature deposition reactions with a small amount of precursor as compared with silicon chlorides, 13,14 which is mainly due to the high reactivity of the alkylamido ligand toward surface hydroxyl groups. 15 Therefore, ALD processes using diisopropylaminosilane (DIPAS, SiH 3 (N i Pr 2 )), bis(diethylamino)silane (BDEAS, SiH 2 (NEt 2 ) 2 ), or tris(dimethylamino)silane (tris-DMAS, SiH(NMe 2 ) 3 ) were adopted in semiconductor manufacturing.…”