“…The plasma CVD reactor with parallel plate electrodes was used as reported previously [10] silicon wafer with resistivity 2-7 cm and (1 0 0) orientation was used as the substrate for the growth of SiC layers. Technological parameters for samples were: substrate temperature for all samples was 300 • C and gas mixture was for sample S1 (SiH 4 -4 ml/min, CH 4 -20 ml/min), S2 (SiH 4 -4 ml/min, CH 4 -20 ml/min, NH 3 -1 ml/min), S3 (SiH 4 -4 ml/min, CH 4 -20 ml/min, NH 3 -3 ml/min), S4 (SiH 4 -4 ml/min, CH 4 -20 ml/min, NH 3 -5 ml/min), respectively.…”