Effect of diamond dicing of SiC device wafers on the technical and operational parameters of monolithic integrated circuits

Gamkrelidze, S. A.; Trofimov, A. A.; Shchavruk, N. V.

doi:10.1134/s1063739717050031

Cited by 2 publications

(1 citation statement)

References 2 publications

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“…The wafer dicing process, which includes the spindle speed, feed rate and dicing depth, has an important influence on die quality. The dicing diamond blade has to be coordinated with the appropriate dicing process in order to fulfil the blade's performance [40][41][42][43]. In order to compare the dicing performance of the blades that were prepared by the two formation methods under different conditions, the influence of the spindle speed, feed rate and cutting depth on the dicing quality was studied and the optimal process parameters for cutting silicon carbide with the diamond blade were obtained in this chapter.…”

Section: Influence Of Dicing Parameters On Sic Surface Qualitymentioning

confidence: 99%

High-Speed Dicing of SiC Wafers with 0.048 mm Diamond Blades via Rolling-Slitting

Feng

Dou

et al. 2022

Materials

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In this study, an innovative fabrication method called rolling-slitting forming, which forms ultra-thin diamond blades, was presented for the first time. Furthermore, the feasibility of the rolling-slitting forming method when applied to silicon carbide wafer dicing blades was investigated; moreover, the cold-pressing blade samples were manufactured through the conventional process under the same sintering conditions to compare and analyze the manufacturing efficiency, organization and performance. The results show that the new method achieves high-precision and low-thickness dicing blades through continuous production without molds—with the thinnest blades being 0.048 mm thick. Furthermore, the rolling-slitting blade has a unique multiporous heat-conductive matrix structure and in-situ generated amorphous pyrolytic carbon, which can reduce the dicing resistance and contribute to a better cutting quality. In addition, the effects of the dicing parameters on SiC were investigated by using indications of spindle current, dicing chipping size and kerf width during the high dicing process. For a dicing depth of 0.2 mm, the ideal performance of dicing SiC with an ultra-thin blade was achieved at a spindle speed of 22,000 rpm and a feed rate of 5 mm/s. This research provides a new idea for the manufacturing of dicing blades, which can satisfy the demand for ultra-narrow dicing streets of high integration of ICs.

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Section: Influence Of Dicing Parameters On Sic Surface Qualitymentioning

confidence: 99%

High-Speed Dicing of SiC Wafers with 0.048 mm Diamond Blades via Rolling-Slitting

Feng

Dou

et al. 2022

Materials

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Study on precision dicing process of SiC wafer with diamond dicing blades

Wang

Yuan

Zhuang

et al. 2021

Nanotechnology and Precision Engineering

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An innovative method for high-speed micro-dicing of SiC has been proposed using two types of diamond dicing blades, a resin-bonded dicing blade and a metal-bonded dicing blade. The experimental research investigated the radial wear of the dicing blade, the maximum spindle current, the surface morphology of the SiC die, the number of chips longer than 10 µm, and the chipped area, which depend on the dicing process parameters such as spindle speed, feed speed, and cutting depth. The chipping fractures in the SiC had obvious brittle fracture characteristics. The performance of the metal-bonded dicing blade was inferior to that of the resin-bonded dicing blade. The cutting depth has the greatest influence on the radial wear of the dicing blade, the maximum spindle current, and the damage to the SiC wafer. The next most important parameter is the feed speed. The parameter with the least influence is the spindle speed. The main factor affecting the dicing quality is blade vibration caused by spindle vibration. The optimal SiC dicing was for a resin-bonded dicing blade with a spindle speed of 20 000 rpm, a feed speed of 4 mm/s, and a cutting depth of 0.1 mm. To improve dicing quality and tool performance, spindle vibrations should be reduced. This approach may enable high-speed dicing of SiC wafers with less dicing damage.

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Effect of diamond dicing of SiC device wafers on the technical and operational parameters of monolithic integrated circuits

Cited by 2 publications

References 2 publications

High-Speed Dicing of SiC Wafers with 0.048 mm Diamond Blades via Rolling-Slitting

High-Speed Dicing of SiC Wafers with 0.048 mm Diamond Blades via Rolling-Slitting

Study on precision dicing process of SiC wafer with diamond dicing blades

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