Effect of diamond facet on the electrical properties of Pt/BF+2 ion implanted polycrystalline diamond contacts

Abstract

Very good quality of polycrystalline diamond films with different major facets were grown on the Si(100) substrates at different position of the plasma ball in a microwave plasma enhanced chemical vapor deposition chamber. Pt/BF+2 ion implanted polycrystalline diamond contacts were fabricated to examine the effect of diamond facets on their electrical properties. The Pt/diamond contact exhibited Schottky characteristics for the diamond film with major facet (100). In contrast, the Pt/diamond contact exhibited ohmic behavior for the diamond film with major facet (111). The I-V characteristics of the Pt/BF+2 ion implanted polycrystalline diamond contacts were not reliable if the diamond facet factor was not considered.

Characteristics of zirconium and niobium contacts on boron-doped diamond

“…Specific resistances reported in this work are larger than reported values from the literature [22]. This difference is attributed to the absence of an amorphisation process step in the preparation of the metal contacts [16,19,46,47].…”

“…Stable ohmic contacts with a low specific contact resistance are crucial to limit electric losses in the operation of electronic power devices. Numerous factors, such as the nature of the metal [9][10][11][12][13][14][15][16], the doping level [12], the surface pre-treatment [9,[17][18][19], the crystalline orientation [16], and the annealing time and temperature [12,[20][21][22] are important in the formation of ohmic or Schottky contacts. The ohmic behavior of the contacts is generally associated related to carbide formation [11][12][13][23][24][25].…”

Pseudo‐Vertical Schottky Diode with Ruthenium Contacts on (113) Boron‐Doped Homoepitaxial Diamond Layers

“…Homoepitaxial boron‐doped diamond layers and bilayers were grown using a 1.5 kW resonance cavity microwave plasma‐enhanced chemical vapor deposition system (AX5010 from Seki Diamond Systems) with a base pressure below 2 × 10 −6 mbar. An HPHT‐grown synthetic Ib diamond crystals (0.5 carats, Sumitomo ELECTRIC, Hartmetall GmbH) were polished along the (113) crystalline plane using traditional scaife polishing techniques described in detail in the study of Cheng et al [ 18 ] to produce plane parallel substrates with an off–angle below 2° and root mean square (RMS) roughness <1 nm. Heavily doped BDD layers were grown in mixtures of CH 4 diluted with H 2 , and trimethylboron (TMB) as a boron precursor using optimized deposition conditions for the growth of epitaxial (100) BDD layers reported in the study of Mortet et al [ 17 ] The microwave power was 700 W, pressure 100 mbar, methane concentration 1%, and different boron to carbon (B/C) ratios in the gas phase (up to 4000 ppm) provided boron concentrations in the BDD layers between 10 17 and 10 21 cm −3 .…”