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Diamond deposition on an anisotropic etched Si and ion implanted Si surfaces have been examined here for the first time. Local facets on an anisotropic etched surface shows no nucleation of diamond. Synthetic diamond, in contrast, has been able to nucleate on an As+ or Si+ ion implanted Si substrate without diamond abrasive pretreatment. Selective deposition of diamond occurs only for low dose ion implantation, 100 keV 1014 cm−2, but not for high dose ion implantation, 100 KeV 1016 cm−2. Strain is proposed as the main reason for nucleation of diamond on the ion implanted Si substrates.

Very good quality of polycrystalline diamond films with different major facets were grown on the Si(100) substrates at different position of the plasma ball in a microwave plasma enhanced chemical vapor deposition chamber. Pt/BF+2 ion implanted polycrystalline diamond contacts were fabricated to examine the effect of diamond facets on their electrical properties. The Pt/diamond contact exhibited Schottky characteristics for the diamond film with major facet (100). In contrast, the Pt/diamond contact exhibited ohmic behavior for the diamond film with major facet (111). The I-V characteristics of the Pt/BF+2 ion implanted polycrystalline diamond contacts were not reliable if the diamond facet factor was not considered.

Enhanced nucleation density of diamond deposition on ion-implanted Si(100) substrate without diamond abrasive pretreatment has been achieved for the first time. The optimum experimental parameters used to achieve good selectivity of diamond on implanted Si(100) were 100 keV P" ion with a dose range between 10 ~4 cm"-' and 10 ~: ~ cm -~-. Selectivity of diamond deposition also depended on thickness of the SiO2 film, which was used as a mask to prevent the Si(100) surface from ion-implantation induced damages. The effects of ion species, ion energy, ion dosage, and annealing temperature on the selective deposition of diamond films also have been discussed.