1992
DOI: 10.1149/1.2069062
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Selective Deposition of Diamond Films on Ion‐Implanted Si(100) by Microwave Plasma Chemical Vapor Deposition

Abstract: Enhanced nucleation density of diamond deposition on ion-implanted Si(100) substrate without diamond abrasive pretreatment has been achieved for the first time. The optimum experimental parameters used to achieve good selectivity of diamond on implanted Si(100) were 100 keV P" ion with a dose range between 10 ~4 cm"-' and 10 ~: ~ cm -~-. Selectivity of diamond deposition also depended on thickness of the SiO2 film, which was used as a mask to prevent the Si(100) surface from ion-implantation induced damages. T… Show more

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Cited by 28 publications
(3 citation statements)
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“…Moreover, this approach allows for not just spatial selectivity, but also topographical selectivity, in which deposition can be achieved on surfaces of 3D patterned substrates based on their geometric orientation. Although an early study in the 1990s looked at selective growth of diamond films on ion-implanted Si by chemical vapor deposition (CVD), , the mechanism in that work was one of implantation-induced defects that relied upon damage of the underlying substrate . Other more recent work has examined selective etching induced by ion-implantation .…”
mentioning
confidence: 99%
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“…Moreover, this approach allows for not just spatial selectivity, but also topographical selectivity, in which deposition can be achieved on surfaces of 3D patterned substrates based on their geometric orientation. Although an early study in the 1990s looked at selective growth of diamond films on ion-implanted Si by chemical vapor deposition (CVD), , the mechanism in that work was one of implantation-induced defects that relied upon damage of the underlying substrate . Other more recent work has examined selective etching induced by ion-implantation .…”
mentioning
confidence: 99%
“…Although an early study in the 1990s looked at selective growth of diamond films on ion-implanted Si by chemical vapor deposition (CVD), 26,27 the mechanism in that work was one of implantation-induced defects that relied upon damage of the underlying substrate. 27 Other more recent work has examined selective etching induced by ion-implantation. 28 However, the use of ion implantation to modify surface properties such as hydrophobicity in order to control deposition has not been previously explored.…”
mentioning
confidence: 99%
“…Area selective diamond growth has been reported in the literature [3][4][5][6][7][8][9][10][11] as the practical alternative to removing undesired parts of a CVD diamond film by mechanical cutting or chemical means. The methods for patterning diamond films onto nondiamond substrates that have been reported in the literature [3][4][5][6][7][8][9][10][11] generally require a series of surface pretreatment steps involving, at some point, the use of a photoresist or a silk-screen mask.…”
Section: Introductionmentioning
confidence: 99%