Abstract:As a kind of wide-band gap semiconductor, ZnS has attracted extensive attention in recent years due to its excellent photoelectric performance, which has broad application prospects in solar cells, photocatalysts and sensors. In this paper, ZnS thin films were first deposited by RF magnetron sputtering, and then annealed at 600℃ and different sulfur pressures. The crystal structure, surface morphology, grain size, composition, transmittance and defects of ZnS thin films were analyzed by XRD, XRD, SEM, EDS, UV-… Show more
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