Effect of Donor Space Charge on Electron Capture Processes   in Quantum Well Infrared Photodetectors

Ryzhii, M.; Ryzhii, V.; Willander, Magnus

doi:10.1143/jjap.38.6650

Cited by 17 publications

(11 citation statements)

References 34 publications

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“…(6) and (7)], the electron heating promotes higher values of the responsivity. As demonstrated by the particle Monte Carlo modeling of the electron capture into quantum wells (QWs) in heterostructures (albeit made of the standard material) with doped barriers [39], the doping affecting the potential profile in the barrier layers can result in a somewhat steeper drop of the capture efficiency with increasing voltage. The hot propagating electrons can provide a heating of the carriers localized in the GLs enhancing the electron thermionic escape.…”

Section: Discussionmentioning

confidence: 99%

Nonlinear response of infrared photodetectors based on van der Waals heterostructures with graphene layers

Ryzhii¹,

Ryzhii²,

Svintsov³

et al. 2017

Opt. Express

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Keywords: graphene, van der Waals heterostructure, infrared photodetector. We study the operation of infrared photodetectors based on van der Waals heterostructures with the multiple graphene layers (GLs) and n-type emitter and collector contacts. The operation of such GL infrared photodetectors (GLIPs) is associated with the photoassisted escape of electrons from the GLs into the continuum states in the conduction band of the barrier layers due to the interband photon absorption, the propagation of these electrons and the electrons injected from the emitter across the heterostructure and their collection by the collector contact. The space charge of the holes trapped in the GLs provides a relatively strong injection and large photoelectric gain. We calculate the GLIP responsivity and dark current detectivity as functions of the energy of incident infrared photons and the structural parameters. It is shown that both the periodic selective doping of the inter-GL barrier layers and the GL doping lead to a pronounced variation of the GLIP spectral characteristics, particularly near the interband absorption threshold, while the doping of GLs solely results in a substantial increase in the GLIP detectivity. The doping "engineering" opens wide opportunities for the optimization of GLIPs for operation in different parts of radiation spectrum from near infrared to terahertz.

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Section: Discussionmentioning

confidence: 99%

Nonlinear response of infrared photodetectors based on van der Waals heterostructures with graphene layers

Ryzhii¹,

Ryzhii²,

Svintsov³

et al. 2017

Opt. Express

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“…Thus, the conditions for the formation of periodic domains are more relaxed for the QW structures with longer period This is in agreement with the results of MC simulations 18) which demonstrate that the spatially oscillating distributions of the average electron energy are pronounced in QW structures with L = 52 nm and longer, while they are smeared in the structures with same QW doping but shorter QW period (L = 34 nm). It is worth noting that at relatively large period of the QW structure the electric-field distributions in the barriers between QWs can be affected by the space charge of residual donors in these barriers 1,16,17) (see also refs. 24 and 29).…”

Section: Discussionmentioning

confidence: 99%

“…24 and references therein) and in MC simulations. 16,17) However, the electric-field dependence of the capture rate and, consequently, the capture parameter become complex when the electric field is not uniform. It was assumed in phenomenological models of the electron transport in multiple QW structures 9,11,14,15) that the capture rate into a QW is determined by an active field which, in turn, is determined by the electric fields at both sides of this QW.…”

Section: Equations Of the Modelmentioning

confidence: 99%

“…The electron system in multiple QW structures excited by infrared radiation at relatively high bias voltages standard for QW infrared photodetector operation conditions is far from equilibrium. 16,17) In particular, the mobile electrons heated by the electric field can be well spread over the continuum states (in different valleys of the conduction band) above the barriers. The nonlocal nature of the relationship between the spatial distributions of the electric field and the average energy of mobile electrons can essentially manifest itself in transport phenomena under such conditions.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Nonlocal Hot-Electron Transport and Capture Model for Multiple Quantum Well Structures Excited by Infrared Radiation

Ryzhii¹,

Suris

2001

Jpn. J. Appl. Phys.

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In this paper, a model for hot-electron transport and capture phenomena in semiconductor heterostructures with multiple uncoupled quantum wells (QW) excited by infrared radiation is presented. The model takes into account the nonlocal character of the electron transport and capture of mobile electrons propagating over the barriers. It includes the Poisson equation and balance equations for electrons and their energy. The model is used for the calculation of steady-state spatial distributions of the electric-field and the average electron energy in multiple QW structures. The conditions of the formation of periodic electricfield domains revealed recently in ensemble Monte Carlo particle simulations are found. The obtained results are compared with the previous analytical calculations based on a simplified model. The relationships between phenomenological parameters of the latter and QW structure parameters are obtained. The developed analytical model highlights the origin of periodic electric-field domains in multiple QW structures and explains some features of such domain behavior.

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“…The donor space charge in the barriers can be the origin of a non-monotonic variation of the capture probability and the current gain as functions of the QW structure period [7]. This is because the QWIPs are considered to be operating in normal condition [7]. The thickness and the depth of the QW are adopted in such a way that the QW contain only one bound level and the first excited level corresponds to the top of the barriers between the QWs.…”

Section: Basic Equation Of the Modelmentioning

confidence: 99%

Performance Analysis of Quantum Well Infrared Photodetectors

Mashade¹,

Ashry²,

Nasr³

2005

Journal of Optical Communications

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In this paper, the overall performance of the characteristic quantum well infrared photo detector QWIP is theoretically analyzed. The performance evaluation includes electrostatic potential voltage, normalized electron sheet concentration, dark current, and responsivity in low and high intensity. Moreover, the threshold voltage, incident infrared power, and the detectivity D* are analytically calculated. Various changes in QWIPs parameter values are discussed.Our goal in this study is to optimize the device to reach a high performance operation. The obtained results are in good agreement with other published and experimental results.

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Effect of Donor Space Charge on Electron Capture Processes in Quantum Well Infrared Photodetectors

Cited by 17 publications

References 34 publications

Nonlinear response of infrared photodetectors based on van der Waals heterostructures with graphene layers

Nonlinear response of infrared photodetectors based on van der Waals heterostructures with graphene layers

Nonlocal Hot-Electron Transport and Capture Model for Multiple Quantum Well Structures Excited by Infrared Radiation

Performance Analysis of Quantum Well Infrared Photodetectors

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