Effect of doping and in-composition on gain of long wavelength III-nitride QDs

Jbara, Ahmed S.; Abood, H. I.; Al-Khursan, Amin H.

doi:10.1007/s12596-012-0085-x

Cited by 4 publications

(2 citation statements)

References 12 publications

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“…[30][31][32] A few recent results are indicating the small band-gap (∼ 0.7 eV) of InN. [33][34][35] This shows that the bandgap of ternary alloy InGaN could cover the whole solar spectrum, i.e., from infrared to ultraviolet. This exclusive bandgap span of nitride-based materials is very crucial in fabricating high-efficiency (50%) multijunction solar cells and full-spectrum devices.…”

Section: Introductionmentioning

confidence: 99%

Effect of size and indium-composition on linear and nonlinear optical absorption of InGaN/GaN lens-shaped quantum dot

2016

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Based on the Schrödinger equation for envelope function in the effective mass approximation, linear and nonlinear optical absorption coefficients in a multi-subband lens quantum dot are investigated. The effects of quantum dot size on the interband and intraband transitions energy are also analyzed. The finite element method is used to calculate the eigenvalues and eigenfunctions. Strain and In-mole-fraction effects are also studied, and the results reveal that with the decrease of the In-mole fraction, the amplitudes of linear and nonlinear absorption coefficients increase. The present computed results show that the absorption coefficients of transitions between the first excited states are stronger than those of the ground states. In addition, it has been found that the quantum dot size affects the amplitudes and peak positions of linear and nonlinear absorption coefficients while the incident optical intensity strongly affects the nonlinear absorption coefficients.

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Section: Introductionmentioning

confidence: 99%

Effect of size and indium-composition on linear and nonlinear optical absorption of InGaN/GaN lens-shaped quantum dot

2016

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“…In our laboratory, Jbara et al studied the gain from the InN/InAlN QD structure which covers the range 300 to 3600 nm finding the importance of QD size in obtaining high gain, 8 they also studied four‐wave mixing characteristics of these structures 9 . Al‐Husseini et al studied GaN/Al .15 Ga .85 N and In .35 Ga .65 N/In .04 Ga .96 N QD structures 3 .…”

Section: Introductionmentioning

confidence: 99%

Comparison between GaN and InN quantum‐dot semiconductor optical amplifiers

Al-Shatravi

Abdullah

Al-Khursan

2020

Micro & Optical Tech Letters

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GaN/Al0.5Ga0.5N and InN/Al0.5Ga0.5N as a III‐nitride quantum dot semiconductor optical amplifiers (QD‐SOAs) are studied in detail in this paper. The optical gain, spontaneous emission rate, and lineshape function are calculated using non‐Markovian relaxation compared with Markovian one. Gain is then connected with the rate equations model to obtain a dB gain, output power, and shot noise in these SOAs. GaN peaked at 351 nm which is preferred in optical coherence tomography applications. InN is peaked at 1028 nm which can be used in gas detection and environmental pollution monitoring. Both structures studied have high gain and low noise and nearly equivalent TE and TM gain which makes them adequate for the use in both these two modes. These calculations show the importance of InN and GaN QD nanostructure in the applications.

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