Abstract:In this work, we calculate material gain for long wavelength IIInitride InN and AlInN quantum dot (QD) structures. Strain and QD inhomogeneity are included in the calculations. The study covers (800-2300 nm) wavelength range which is important in optical communications. While p-doping is shown to be efficient to increasing gain, changing QD size (especially QD radius) is more efficient to vary wavelength. The results predicted that n-doped QD structures are promises for broad band laser applications.

Four wave mixing analysis is stated for quantum dot semiconductor optical amplifiers (QD SOAs) using the propagation equations (including nonlinear propagation contribution) coupled with the QD rate equations under the saturation assumption. Long wavelength III-nitride InN and AlInN QD SOAs are simulated. Asymmetric behavior due to linewidth enhancement factor is assigned. P-doping increases efficiency. Lossless efficiency for InAlN QDs for longer radii is obtained. Carrier heating is shown to have a considerable effect and a detuning dependence is expected at most cases. InN QD SOAs shown to have higher efficiency.