Effect of Dy doping on the crystal orientation, microstructure, and electrical properties of PDZT thin films prepared by sol–gel method

Zhang, Renkai; Wang, Xing; Zhang, Shuai; Zhou, Yang; Zou, Helin

doi:10.1007/s10854-020-05108-6

Cited by 3 publications

(1 citation statement)

References 36 publications

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“…Rath et al (2019) reported the enhancement of piezoelectric constant d 33 (more than 130 pm/V) in La doped PZT film. Zhang et al (2021) achieved a large remnant polarization (22.73 μC/cm 2 ) in the 2 mol% Dy doped PZT (60/40) thin films. Moreover, the films also exhibited a significantly reduced leakage current density.…”

Section: Rare-earth Doped Piezoelectric Filmsmentioning

confidence: 91%

Review of Research on the Rare-Earth Doped Piezoelectric Materials

et al. 2021

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The piezoelectric materials, such as ceramics, crystals, and films, have wide applications in the mechanical industry, medical imaging, electronic information, and ultrasonic devices, etc. Generally, adding oxide dopants, or introducing new solid solutions to form the morphotropic phase boundary of the piezoelectric materials were common strategies to enhance the electric properties. In recent decades, rare-earth elements doped piezoelectric materials have attracted much attention due to their multifunctional performances combining piezoelectric and photoluminescence properties, which has potential applications in ultrasonics, electronics, automatic control, machinery and optoelectronic fields. An overview of the recent investigations and perspectives on rare-earth doped piezoelectric ceramics, single crystals, and films were presented.

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Section: Rare-earth Doped Piezoelectric Filmsmentioning

confidence: 91%

Review of Research on the Rare-Earth Doped Piezoelectric Materials

et al. 2021

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Sm-doped PZT thin film with high piezoelectric properties by sol-gel method

Ti,

Li,

Fan

et al. 2024

Journal of Applied Physics

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In this study, Pb(Zr0.54Ti0.46)O3 films were prepared by the sol-gel method with Sm doping concentrations of 0, 0.5, 1, 1.5, 2, and 3 mol. %. Their surface morphology, density, crystal structure, piezoelectric, dielectric, and ferroelectric properties were characterized. The results indicated that, unlike Sm-doped lead zirconate titanate (PZT) ceramics, all Sm-PZT films exhibit a significant increase in the grain size compared to undoped PZT films. Moreover, Sm doping affected their crystal orientation and significantly enhanced their piezoelectric coefficient d33 and remnant polarization (Pr). Notably, the Sm-PZT film with a doping concentration of 1.5 mol. % exhibited optimal (100) orientation, achieving a high piezoelectric coefficient d33 of 279.87 pm/V, 4.55 times that of the non-doped PZT films.

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Effects of La Doping on the Properties of Different Zr/Ti Gradient Lead Zirconate Titanate Thin Films

张

2022

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Effect of Dy doping on the crystal orientation, microstructure, and electrical properties of PDZT thin films prepared by sol–gel method

Cited by 3 publications

References 36 publications

Review of Research on the Rare-Earth Doped Piezoelectric Materials

Review of Research on the Rare-Earth Doped Piezoelectric Materials

Sm-doped PZT thin film with high piezoelectric properties by sol-gel method

Effects of La Doping on the Properties of Different Zr/Ti Gradient Lead Zirconate Titanate Thin Films

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