Effect of dynamical Coulomb interaction on junctionless transistor performance: Monte Carlo study of plasmon excitations

We examine the transport properties of heavily doped ultra-scaled Si junctionless nanowire field-effect transistors, by means of atomistic quantum transport simulations based on the sp3d5s∗ tight-binding model, the nonequilibrium Green's function formalism, and including electron-phonon scattering. Each individual doping atom is treated explicitly and its potential is determined by solving the Poisson equation. The impurity atoms are assumed to be aligned along a single line or to slightly vary from this well-ordered configuration. We find that the impurity-limited mobility enhances as the carrier concentration increases due to the screening effect. The mobility also improves with the doping concentration because closely placed impurities induce resonant tunneling states that positively affect the current magnitude. This behavior is found to persist even in the case of slight disorder.

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Enhanced impurity-limited mobility in ultra-scaled Si nanowire junctionless field-effect transistors

Ueda

Luisier

Sano

2015

Applied Physics Letters

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Effect of dynamical Coulomb interaction on junctionless transistor performance: Monte Carlo study of plasmon excitations

Abstract: Determination of the maximum energy loss for electron stopping power calculations and its effect on backscattering electron yield in Monte-Carlo simulations applying continuous slowing-down approximation

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Enhanced impurity-limited mobility in ultra-scaled Si nanowire junctionless field-effect transistors

Enhanced impurity-limited mobility in ultra-scaled Si nanowire junctionless field-effect transistors

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