Effect of dysprosium and lutetium metal buffer layers on the resistive switching characteristics of Cu–Sn alloy-based conductive-bridge random access memory

Abstract

The conductive-bridge random access memory (CBRAM) has become one of the most suitable candidates for non-volatile memory in next-generation information and communication technology. The resistive switching (RS) mechanism of CBRAM depends on the formation/annihilation of the conductive filament (CF) between the active metal electrode and the inert electrode. However, excessive ion injection from the active electrode into the solid electrolyte reduces the uniformity and reliability of the RS devices. To solve this problem, we investigated the RS characteristics of a CuSn alloy active electrode with different compositions of Cu-Sn (0.13 < X < 0.55). The RS characteristics were further improved by inserting a dysprosium (Dy) or lutetium (Lu) buffer layer at the interface of Cu-Sn/AlO. Electrical analysis of the optimal Cu-Sn/Lu-based CBRAM exhibited stable RS behavior with low operation voltage (SET: 0.7 V and RESET: -0.3 V), a high on state/off state resistive ratio (10), AC cyclic endurance (>10), and stable retention (85 °C/10 years). To achieve these performance parameters, CFs were locally formed inside the electrolyte using a modified CuSn active electrode, and the amount of Cu-ion injection was reduced by inserting the Dy or Lu buffer layer between the CuSn active electrode and the electrolyte. In particular, conductive-atomic force microscopy results at the Dy or Lu/AlO interface directly showed and defined the diameter of the CF.

Effect of Heat Treatment Temperature on the Spinning Structure and Properties of a Cu–Sn Alloy

“…The Cu–Sn alloy used in the modern industrial era contains trace alloying elements, such as iron, zinc, and nickel, giving it excellent wear resistance, corrosion resistance, strength, and plasticity (Liang & Lin, 2018; Liang et al, 2018; Somidin et al, 2018). It is therefore commonly used for manufacturing sliding bearings and connecting rods for engines (Huang et al, 2016; Vishwanath et al, 2018).…”

Bioresorbable Resistive Switching Device Based on Organic/Inorganic Hybrid Structure for Transient Memory Applications

“…[ 29 ] With the existence of these vacancies, the conductive filament is difficult to remove completely after biasing a negative voltage and the distance between the broken filament is too small, bringing about a low on/off ratio. [ 30 ] The increase in the memory window of a Mg/agarose/Al 2 O 3 /Mg device is mostly related to the contribution of the insulating nature and low electronic conductivity of the polymer matrix. [ 31 ] Therefore, the memory windows of Mg/Al 2 O 3 /Mg are much smaller than a Mg/agarose/Al 2 O 3 /Mg structure device.…”

Extremely Low Leakage Threshold Switch with Enhanced Characteristics via Ag Doping on Polycrystalline ZnO Fabricated by Facile Electrochemical Deposition for an X-Point Selector

“…One can think of the prudent way to resolve the issues by fabricating a TS device without incorporating the active electrode in it, restricting the amount of Ag ions accessible to the switching layer (SL), thus achieving ideally behaving reliable TS characteristics, as conceptually shown in Figure e. Several research studies have designed the structures to prevent the overinjection of electrochemically active metal ions (Ag or Cu ions) into the solid–electrolyte by modifying the active electrode, − introducing metal doping ,− or by restricting the overdiffusion of metal using highly ordered Ag nanodots . They have demonstrated their outshining performances; however, the devices sometimes require postannealing or involve complex fabrication processes, which hinders further stacking for the scalable cross-point array architecture.…”