Effect of electric field concentration using nanopeak structures on the current–voltage characteristics of resistive switching memory

Otsuka, Shintaro; Shimizu, Tomohiro; Shingubara, Shoso; Makihara, Katsunori; Miyazaki, Seiichi; Yamasaki, Akira; Tanimoto, Yusuke; Takase, Kouichi

doi:10.1063/1.4892823

Cited by 12 publications

(8 citation statements)

References 24 publications

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“…[23][24][25][26][27][28][29] In the case of anodizing of metallic alloys, resulting oxide will be a mixed oxide in which the atomic ratio between partner metals can be different with respect to the underlying alloys depending on transport numbers of involved cations. To date, there are several papers in which porous anodic aluminum oxide is used as a matrix for the fabrication of ReRAMs [30][31][32][33] or anodic nanostructured oxides are used as solid electrolytes, [34][35][36][37][38] but only few papers discuss on ReRAMs devices with barriertype anodic oxides however not showing some particular promises. [39][40][41][42] Here we demonstrate Ta/Ta 2 O 5 /Pt system with electrochemically grown Ta Increasing the voltage over + 3 V leads to a formation of filament i.e.…”

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confidence: 99%

Electrochemical Tantalum Oxide for Resistive Switching Memories

et al. 2017

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Redox-based resistive switching memories (ReRAMs) are strongest candidates for the next-generation nonvolatile memories fulfilling the criteria for fast, energy efficient, and scalable green IT. These types of devices can also be used for selector elements, alternative logic circuits and computing, and memristive and neuromorphic operations. ReRAMs are composed of metal/solid electrolyte/metal junctions in which the solid electrolyte is typically a metal oxide or multilayer oxides structures. Here, this study offers an effective and cheap electrochemical approach to fabricate Ta/Ta O -based devices by anodizing. This method allows to grow high-quality and dense oxide thin films onto a metallic substrates with precise control over morphology and thickness. Electrochemical-oxide-based devices demonstrate superior properties, i.e., endurance of at least 10 pulse cycles and/or 10 I-V sweeps maintaining a good memory window with a low dispersion in R and R values, nanosecond fast switching, and data retention of at least 10 s. Multilevel programing capability is presented with both I-V sweeps and pulse measurements. Thus, it is shown that anodizing has a great prospective as a method for preparation of dense oxide films for resistive switching memories.

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confidence: 99%

Electrochemical Tantalum Oxide for Resistive Switching Memories

et al. 2017

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“…The major advantages of the localized electric field enhancement by NCs can be utilized to design the bottom electrode layer. Several nanostructures-based bottom electrodes are reported to improve the performance of RRAM devices, such as nano-pyramid [123], nano-peak [124], arc-shaped [125], and so on [126]. A detailed review on defect engineering in RRAM is reported in Reference [127].…”

Section: Defect Engineering Of Resistive Memory Devicesmentioning

confidence: 99%

Challenges and Applications of Emerging Nonvolatile Memory Devices

2020

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Emerging nonvolatile memory (eNVM) devices are pushing the limits of emerging applications beyond the scope of silicon-based complementary metal oxide semiconductors (CMOS). Among several alternatives, phase change memory, spin-transfer torque random access memory, and resistive random-access memory (RRAM) are major emerging technologies. This review explains all varieties of prototype and eNVM devices, their challenges, and their applications. A performance comparison shows that it is difficult to achieve a “universal memory” which can fulfill all requirements. Compared to other emerging alternative devices, RRAM technology is showing promise with its highly scalable, cost-effective, simple two-terminal structure, low-voltage and ultra-low-power operation capabilities, high-speed switching with high-endurance, long retention, and the possibility of three-dimensional integration for high-density applications. More precisely, this review explains the journey and device engineering of RRAM with various architectures. The challenges in different prototype and eNVM devices is disused with the conventional and novel application areas. Compare to other technologies, RRAM is the most promising approach which can be applicable as high-density memory, storage class memory, neuromorphic computing, and also in hardware security. In the post-CMOS era, a more efficient, intelligent, and secure computing system is possible to design with the help of eNVM devices.

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“…2(b) and (c). The edges of the needle architectures possess positive charges by the principle of electric field concentration; 19 thus, the negatively charged GO was accumulated on the AuNS layers by electrostatic interactions. Indeed, the distribution of elements in the energy dispersive X-ray (EDX)-mapping (Fig.…”

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confidence: 99%